公开(公告)号：US20250107151A1

公开(公告)日：2025-03-27

申请号：US18822885

申请日：2024-09-03

Applicant: LG Display Co., Ltd.

Inventor： Ahrum Sohn ,  JaeYoung Oh

IPC: H01L29/786 ,  H01L29/417

Abstract: A thin film transistor substrate presented herein includes a substrate, a first gate electrode on the substrate, the first gate electrode including a first portion and a second portion, an active layer on the first gate electrode, a second gate electrode on the active layer, the second gate electrode overlapping at least the first portion of the first gate electrode, a source electrode connected to a first side of the active layer, and a drain electrode connected to a second side of the active layer, wherein the first portion overlaps the second gate electrode, the second portion protrudes from an end of the first portion in a direction towards the source electrode or the drain electrode, and a thickness of the second portion is smaller than a thickness of the first portion. A display device includes the thin film transistor substrate as presented herein.