公开(公告)号：US20160343995A1

公开(公告)日：2016-11-24

申请号：US15227139

申请日：2016-08-03

Applicant: LG Display Co., Ltd.

Inventor： Kyoung-June JUNG ,  Donghyun YEO

IPC: H01L51/56 ,  H01L27/32

CPC classification number: H01L51/56 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L2227/323

Abstract: A method of manufacturing an organic light emitting display panel, the method including: providing a pixel defined by an intersection of one of a plurality of data lines and one of a plurality of gate lines, the providing the pixel including: providing a transistor, providing a storage capacitor including: a first electrode, and a second electrode, and providing a semiconductor layer, providing a first plate partially overlapping the semiconductor layer in the pixel, the providing a first plate including: providing a gate portion of the transistor, and providing a capacitor-forming portion including the first electrode of the storage capacitor, and providing a second plate on the first plate in the pixel, the second plate including the second electrode of the storage capacitor, the second plate not overlapping the semiconductor layer.

Abstract translation: 一种制造有机发光显示面板的方法，所述方法包括：提供由多条数据线中的一条数据线与多条栅极线之一相交而定义的像素，所述提供所述像素包括：提供晶体管，提供 存储电容器，包括：第一电极和第二电极，并且提供半导体层，提供与像素中的半导体层部分重叠的第一板，提供第一板，包括：提供晶体管的栅极部分，并提供 包括存储电容器的第一电极的电容器形成部分，并且在像素中的第一板上提供第二板，第二板包括存储电容器的第二电极，第二板不与半导体层重叠。

公开(公告)号：US20170154944A1

公开(公告)日：2017-06-01

申请号：US15299364

申请日：2016-10-20

Applicant: LG Display Co., Ltd.

Inventor： Nakwoo KIM ,  Jaeho SIM ,  Donghyun YEO

IPC: H01L27/32

CPC classification number: H01L27/3276 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3225 ,  H01L27/3272

Abstract: An organic light emitting display in which each pixel has a driving thin film transistor for adjusting the current flowing through an organic light emitting diode based on a voltage applied to a gate electrode, includes the gate electrode of the driving thin film transistor; a signal line adjacent to the gate electrode of the driving thin film transistor; and a first shielding electrode located above the gate electrode of the driving thin film transistor, with a first insulating layer therebetween, wherein the first shielding electrode extends further towards the signal line than the gate electrode of the driving thin film transistor.