公开(公告)号：US20240339558A1

公开(公告)日：2024-10-10

申请号：US18627116

申请日：2024-04-04

Applicant: LG Display Co., Ltd.

Inventor： ChungHwan AN ,  Eunjeong SHIN

IPC: H01L33/00 ,  H01L21/68 ,  H01L21/683 ,  H01L25/16

CPC classification number: H01L33/0093 ,  H01L21/68 ,  H01L21/6838 ,  H01L25/167

Abstract: Provided is a transfer method of a light emitting diode. The transfer method of the light emitting diode includes bonding a wafer in which a plurality of light emitting diodes is formed and a donor; transferring the plurality of light emitting diodes to the donor and detaching the wafer and the donor, the detaching of the wafer and the donor includes loading the bonded wafer and donor on a stage and a support member, fixing one of outermost portions of the donor by a fixing member, fixing one surface of the wafer to a head, moving the stage and the fixing member to a Z-axis direction, and moving the wafer and the head to an X-axis direction. Accordingly, the wafer and the donor are detached by the linear separation method to reduce the defective transfer of the plurality of light emitting diodes.

公开(公告)号：US20200212026A1

公开(公告)日：2020-07-02

申请号：US16727743

申请日：2019-12-26

Applicant: LG Display Co., Ltd.

Inventor： HyeonHo SON ,  HanSaem KANG ,  Bogyun CHUNG ,  Sungeun BAE ,  HyungJu PARK ,  Eunjeong SHIN ,  Jeenmoon YANG

IPC: H01L25/16 ,  H01L27/12

Abstract: A display device can include a substrate on which a semiconductor element and a common electrode are disposed; a light emitting diode which is disposed on the substrate and includes an n-type layer, a light emitting layer, and a p-type layer; an insulating layer disposed on the substrate and the light emitting diode; and a first connecting electrode which is connected to the light emitting diode and the semiconductor element. Accordingly, it is possible to minimize defects which can be caused during a process of disposing the light emitting diode on the substrate.