公开(公告)号：US20240363585A1

公开(公告)日：2024-10-31

申请号：US18768802

申请日：2024-07-10

Applicant: VueReal Inc.

Inventor： Gholamreza Chaji

IPC: H01L23/00 ,  H01L21/66 ,  H01L21/683 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/62 ,  H05K13/04

CPC classification number: H01L24/97 ,  H01L21/6835 ,  H01L22/20 ,  H01L24/80 ,  H01L24/95 ,  H01L33/0093 ,  H01L33/08 ,  H01L33/12 ,  H01L33/62 ,  H05K13/046 ,  H01L22/14 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/06 ,  H01L2221/68309 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/80006 ,  H01L2224/80132 ,  H01L2224/95001

Abstract: This invention relates to integrating pixelated micro-devices into a system substrate. Defined are methods of transferring a plurality of micro-devices into a receiver substrate where a plurality of micro-devices is arranged in one or more cartridges that are aligned and bonded to a template. Further, defining the transfer process, the micro-devices may be selected, identified as defective and a transfer adjustment made based on defective micro-devices.

公开(公告)号：US12132142B2

公开(公告)日：2024-10-29

申请号：US17434253

申请日：2020-02-28

Applicant: KYOCERA Corporation

Inventor： Katsuaki Masaki ,  Kentaro Murakawa

IPC: H01L33/00 ,  H01L23/00 ,  H01L33/40

CPC classification number: H01L33/0093 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/40 ,  H01L2224/05073 ,  H01L2224/05171 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/08123 ,  H01L2224/08145 ,  H01L2224/08147 ,  H01L2224/80365 ,  H01L2224/80801 ,  H01L2933/0016

Abstract: A method of manufacturing a semiconductor element according to the present disclosure includes an element forming step (S1) of forming, on an underlying substrate (11), a semiconductor element (15) connected to the underlying substrate (11) via a connecting portion (13b) and including an upper surface (15a) inclined with respect to a growth surface of the underlying substrate (11), a preparing step (S2) of preparing a support substrate (16) including an opposing surface (16c) facing the underlying substrate (11), a bonding step (S3) of pressing the upper surface (15a) of the semiconductor element (15) against the opposing surface (16c) of the support substrate (16) and heating the upper surface (15a) to bond the upper surface (15a) of the semiconductor element (15) to the support substrate (16), and a peeling step (S4) of peeling the semiconductor element (15) from the underlying substrate (11).

公开(公告)号：US20240347674A1

公开(公告)日：2024-10-17

申请号：US18751540

申请日：2024-06-24

Applicant: NGK INSULATORS, LTD.

Inventor： Ayumi SAITO ,  Tomohiko SUGIYAMA

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/32 ,  H01L33/0093 ,  H01L33/20

Abstract: A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface. The Group-III element nitride semiconductor substrate has a thickness of 200 μm or more. In one embodiment, the number N of times of light-and-dark switching in a line segment having a length of 2 mm, which is drawn in a crossed-Nicols image obtained by observation of a region including a central portion of a surface of the first surface with a polarizing microscope, is 50 or more.

公开(公告)号：US20240339558A1

公开(公告)日：2024-10-10

申请号：US18627116

申请日：2024-04-04

Applicant: LG Display Co., Ltd.

Inventor： ChungHwan AN ,  Eunjeong SHIN

IPC: H01L33/00 ,  H01L21/68 ,  H01L21/683 ,  H01L25/16

CPC classification number: H01L33/0093 ,  H01L21/68 ,  H01L21/6838 ,  H01L25/167

Abstract: Provided is a transfer method of a light emitting diode. The transfer method of the light emitting diode includes bonding a wafer in which a plurality of light emitting diodes is formed and a donor; transferring the plurality of light emitting diodes to the donor and detaching the wafer and the donor, the detaching of the wafer and the donor includes loading the bonded wafer and donor on a stage and a support member, fixing one of outermost portions of the donor by a fixing member, fixing one surface of the wafer to a head, moving the stage and the fixing member to a Z-axis direction, and moving the wafer and the head to an X-axis direction. Accordingly, the wafer and the donor are detached by the linear separation method to reduce the defective transfer of the plurality of light emitting diodes.

公开(公告)号：US12113159B2

公开(公告)日：2024-10-08

申请号：US17419623

申请日：2019-12-31

Applicant: NANO-X

Inventor： Du Jin Park ,  Pil Kuk Jang

IPC: H01L33/62 ,  H01L33/00 ,  H01L33/24 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/24 ,  H01L33/0008 ,  H01L33/08 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: Proposed is a dual emission LED chip that emits light to the upper and lower sides of a PN junction, wherein the duel emission LED chip uses the electroluminescent effect of the PN junction including a P layer and an N layer provided below the P layer, and characterized in that the dual emission LED chip emits light in the upward direction of the P layer and the downward direction of the N layer. The dual emission chip can be applied as a single chip to a field requiring dual emission, thereby enabling miniaturization of applied equipment, and increases power efficiency, thereby reducing manufacturing costs. In addition, as the dual emission LED chip can be manufactured through a batch process, a separate packaging process is not required.

公开(公告)号：US12113092B2

公开(公告)日：2024-10-08

申请号：US18313638

申请日：2023-05-08

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L27/15 ,  H01L23/60 ,  H01L25/16 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L27/15 ,  H01L23/60 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/382 ,  H01L33/405 ,  H01L25/167 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

公开(公告)号：US12112968B2

公开(公告)日：2024-10-08

申请号：US17288430

申请日：2019-10-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ralph Wagner

IPC: B32B43/00 ,  H01L21/683 ,  H01L33/00 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L21/6835 ,  B32B43/006 ,  H01L33/0093 ,  H01L33/22 ,  H01L33/32 ,  H01L2221/68354 ,  H01L2221/68368 ,  Y10T156/1158 ,  Y10T156/1917

Abstract: In an embodiment a method includes providing a growth substrate with a plurality of semiconductor bodies for the semiconductor devices, wherein each semiconductor body comprises electrical contact structures and a separation layer arranged towards the growth substrate, arranging a rigid first auxiliary carrier on a side of the semiconductor bodies facing away from the growth substrate, wherein the first auxiliary carrier comprises a first detachment layer, detaching the growth substrate by laser radiation, wherein the laser radiation is absorbed in the separation layer, arranging a rigid second auxiliary carrier on a side of the semiconductor bodies facing away from the first auxiliary carrier, wherein the second auxiliary carrier comprise a second detachment layer, detaching the first auxiliary carrier by laser radiation, wherein the laser radiation is absorbed in the first detachment layer and the separation layer still extending continuously over the growth substrate while detaching and mechanically and electrically arranging the semiconductor bodies on at least one permanent carrier.

公开(公告)号：US12095010B2

公开(公告)日：2024-09-17

申请号：US18051182

申请日：2022-10-31

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Cheng Meng ,  Yuehua Jia ,  Jing Wang ,  Chun-Yi Wu ,  Ching-Shan Tao ,  Duxiang Wang

IPC: H01L33/40 ,  H01L33/00 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/405 ,  H01L33/0093 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/30 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

公开(公告)号：US12087895B2

公开(公告)日：2024-09-10

申请号：US17522394

申请日：2021-11-09

Applicant: NICHIA CORPORATION

Inventor： Hajime Akimoto

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/42 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/62 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/32 ,  H01L33/42 ,  H01L33/50 ,  H01L2933/0041 ,  H01L2933/0066

Abstract: A manufacturing method of an embodiment includes: providing a semiconductor growth substrate including a semiconductor layer including a light-emitting layer on a first substrate; forming a first insulating film on a second substrate that includes a circuit that includes a circuit element and a first wiring layer; forming a plug in the first insulating film to be connected with the circuit element; bonding the semiconductor layer to the second substrate and electrically connecting the plug to the semiconductor layer; forming a light-emitting element electrically connected to the plug by patterning the semiconductor layer; forming a second insulating film that covers the light-emitting element and the first insulating film; exposing a portion of the light-emitting element by removing a portion of the second insulating film; and forming a second wiring layer on the second insulating film.

公开(公告)号：US12087893B2

公开(公告)日：2024-09-10

申请号：US17440213

申请日：2020-03-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Hoeppel ,  Attila Molnar

IPC: H01L33/60 ,  H01L33/00 ,  H01L33/22 ,  H01L33/62

CPC classification number: H01L33/62 ,  H01L33/0093 ,  H01L33/22 ,  H01L33/60 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: An optoelectronic semiconductor device may include a carrier having a roughened first main surface and optoelectronic semiconductor chips arranged over the roughened first main surface. The combined surface area of the optoelectronic semiconductor chips is smaller than the surface area of the carrier, and a part of the roughened first main surface is arranged between adjacent optoelectronic semiconductor chips.