公开(公告)号：US11429215B2

公开(公告)日：2022-08-30

申请号：US17130822

申请日：2020-12-22

Applicant: LG Display Co., Ltd.

Inventor： Heon-Kwang Park ,  Soon-Kwang Hong ,  Mardin Kwon

IPC: G06F3/041 ,  H01L51/52 ,  H01L27/32

Abstract: An electroluminescent display device is provided. The device includes a substrate on which a display area displaying an image and a non-display area surrounding the display area are defined. The device includes a thin film transistor and a light-emitting diode disposed in the display area on the substrate and electrically connected to each other. The device further includes an encapsulation part covering the thin film transistor and the light-emitting diode, a touch sensor part on the encapsulation part, and first and second crack stoppers disposed in the non-display area on the substrate. The second crack stopper is disposed between the first crack stopper and the display area. The first crack stopper includes a first pattern that is formed through a same process as an electrode layer of the touch sensor part.

公开(公告)号：US08754410B2

公开(公告)日：2014-06-17

申请号：US13706730

申请日：2012-12-06

Applicant: LG Display Co., Ltd.

Inventor： Heon-Kwang Park ,  Dong-Hun Lim

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78693 ,  H01L27/088 ,  H01L29/247 ,  H01L29/41733 ,  H01L29/7869 ,  H01L29/78696

Abstract: An array substrate includes a gate line on a substrate including a pixel region, the gate line extending in one direction; a gate electrode in the pixel region and extending from the gate line; a gate insulating layer on the gate line and the gate electrode; a data line on the gate insulating layer and crossing the gate line to define the pixel region; an oxide semiconductor layer on the gate insulating layer and having three ends, the oxide semiconductor layer corresponding to the gate electrode; an etch stopper on the oxide semiconductor layer to expose the three ends of the oxide semiconductor layer; a source electrode contacting two ends of the three ends of the oxide semiconductor layer and extending from the data line; and a drain electrode contacting one end of the three ends of the oxide semiconductor layer and spaced apart from the source electrode.

Abstract translation: 阵列基板包括在包括像素区域的基板上的栅极线，所述栅极线在一个方向上延伸; 像素区域中的栅电极并从栅极线延伸; 栅极线上的栅极绝缘层和栅电极; 栅极绝缘层上的数据线并与栅极线交叉以限定像素区域; 栅极绝缘层上的氧化物半导体层，具有与端电极相对应的三端的氧化物半导体层; 氧化物半导体层上的蚀刻停止层，以露出氧化物半导体层的三个端部; 源电极接触氧化物半导体层的三端的两端并从数据线延伸; 以及漏极，其与氧化物半导体层的三个端部的一端接触并且与源电极间隔开。