公开(公告)号：US20250169149A1

公开(公告)日：2025-05-22

申请号：US18790075

申请日：2024-07-31

Applicant: LG Display Co., Ltd.

Inventor： HyeJi JEON ,  Soyang CHOI ,  Yubeen LIM ,  Youngjin YI

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H10K59/121

Abstract: A thin film transistor includes a buffer layer on a base substrate and having a trench; an active layer on the buffer layer; and a gate electrode overlapping the active layer. The active layer includes a channel area, a source area, and a drain area. The trench includes a first trench having the source area therein, and a second trench having the drain area therein. The channel area includes a first channel area, a second channel area on one side of the first channel area and in the first trench, and a third channel area on the other side of the first channel area and in the second trench. A distance between the upper surface of the base substrate and the second channel area is shorter than a shortest distance between the upper surface of the base substrate and the first channel area.