公开(公告)号：US20250169149A1

公开(公告)日：2025-05-22

申请号：US18790075

申请日：2024-07-31

Applicant: LG Display Co., Ltd.

Inventor： HyeJi JEON ,  Soyang CHOI ,  Yubeen LIM ,  Youngjin YI

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H10K59/121

Abstract: A thin film transistor includes a buffer layer on a base substrate and having a trench; an active layer on the buffer layer; and a gate electrode overlapping the active layer. The active layer includes a channel area, a source area, and a drain area. The trench includes a first trench having the source area therein, and a second trench having the drain area therein. The channel area includes a first channel area, a second channel area on one side of the first channel area and in the first trench, and a third channel area on the other side of the first channel area and in the second trench. A distance between the upper surface of the base substrate and the second channel area is shorter than a shortest distance between the upper surface of the base substrate and the first channel area.

公开(公告)号：US20230329047A1

公开(公告)日：2023-10-12

申请号：US18132847

申请日：2023-04-10

Applicant: LG Display Co., Ltd.

Inventor： YounGyoung CHANG ,  WonSang RYU ,  Youngjin YI ,  Hanseok LEE ,  SungSoo SHIN ,  Jungyul YANG ,  JungJune KIM ,  Jihwan JUNG ,  Soyang CHOI ,  Yubeen LIM

IPC: H01L29/12 ,  G09G3/3233

CPC classification number: H10K59/126 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0861 ,  G09G2300/0842

Abstract: A thin film transistor substrate can include a first thin film transistor on a substrate, the first thin film transistor including a first active layer and a first gate electrode; and a second thin film transistor on the substrate, the second thin film transistor including a second active layer and a second gate electrode, each of the second active layer and the second gate electrode being located farther away from the substrate than the first active layer and the first gate electrode. Also, the thin film transistor substrate can include a first insulating layer disposed between the first gate electrode and the second active layer; and a first connection electrode connecting the first gate electrode with the second active layer, in which the first connection electrode extends through a first contact hole in the first insulating layer and contacts both of the first gate electrode and the second active layer.