公开(公告)号：US20240204108A1

公开(公告)日：2024-06-20

申请号：US18506486

申请日：2023-11-10

Applicant: LG Display Co., Ltd.

Inventor： Sunggu Kim ,  JeeHo Park ,  Hyunki Kim ,  KwangHeum Lee

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L21/02554 ,  H01L21/02609 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66742

Abstract: A thin film transistor, and a manufacturing method of the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode spaced apart from the active layer and partially overlapping the active layer, wherein the active layer includes a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, wherein the first oxide semiconductor layer has an amorphous structure, the second oxide semiconductor layer has a crystalline structure. In addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.