公开(公告)号：US12249655B2

公开(公告)日：2025-03-11

申请号：US18465703

申请日：2023-09-12

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US11791418B2

公开(公告)日：2023-10-17

申请号：US17859946

申请日：2022-07-07

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

CPC classification number: H01L29/7869 ,  G09G3/3266 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0245 ,  G09G2310/08

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US11417774B2

公开(公告)日：2022-08-16

申请号：US17154852

申请日：2021-01-21

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US11201248B2

公开(公告)日：2021-12-14

申请号：US16790591

申请日：2020-02-13

Applicant: LG Display Co., Ltd.

Inventor： HeeSung Lee ,  SungKi Kim ,  MinCheol Kim ,  SeungJin Kim ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  G02F1/1333

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US10930790B2

公开(公告)日：2021-02-23

申请号：US15994765

申请日：2018-05-31

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US10608117B2

公开(公告)日：2020-03-31

申请号：US16019294

申请日：2018-06-26

Applicant: LG Display Co., Ltd.

Inventor： HeeSung Lee ,  SungKi Kim ,  MinCheol Kim ,  SeungJin Kim ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  G02F1/1333

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US12176437B2

公开(公告)日：2024-12-24

申请号：US17524255

申请日：2021-11-11

Applicant: LG Display Co., Ltd.

Inventor： HeeSung Lee ,  SungKi Kim ,  MinCheol Kim ,  SeungJin Kim ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  H10K59/122 ,  H10K59/38 ,  G02F1/1333

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20240204108A1

公开(公告)日：2024-06-20

申请号：US18506486

申请日：2023-11-10

Applicant: LG Display Co., Ltd.

Inventor： Sunggu Kim ,  JeeHo Park ,  Hyunki Kim ,  KwangHeum Lee

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L21/02554 ,  H01L21/02609 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66742

Abstract: A thin film transistor, and a manufacturing method of the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode spaced apart from the active layer and partially overlapping the active layer, wherein the active layer includes a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, wherein the first oxide semiconductor layer has an amorphous structure, the second oxide semiconductor layer has a crystalline structure. In addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.

公开(公告)号：US20220069130A1

公开(公告)日：2022-03-03

申请号：US17524255

申请日：2021-11-11

Applicant: LG Display Co., Ltd.

Inventor： HeeSung Lee ,  SungKi Kim ,  MinCheol Kim ,  SeungJin Kim ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.