公开(公告)号：US09129923B1

公开(公告)日：2015-09-08

申请号：US14446051

申请日：2014-07-29

Applicant: LG Display Co., Ltd.

Inventor： Jeon-Phill Han ,  Ho-Jin Ryu

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/56 ,  G09G3/32

CPC classification number: H01L27/3248 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2320/0295 ,  G09G2330/08 ,  H01L27/3262 ,  H01L27/3276 ,  H01L2251/568

Abstract: A repair path is established between a sub-pixel with a defective drive transistor and another sub-pixel with an operable drive transistor to connect storage capacitors in the two sub-pixels in parallel. Another repair path is established to operate a light emitting device by the operable drive transistor of the second sub-pixel. Terminals of the storage capacitors in the two pixels are connected to a gate of the operable drive transistor. The voltage at the terminals of the storage capacitors are maintained above the threshold voltage of the operable drive transistor is switched on for a longer time due to the combined capacitance of the two storage capacitance. Hence, the sub-pixel with the defective drive transistor and the other sub-pixel of the operable drive transistor remain turned on for a longer time. Hence, despite providing a lower level of current to each of the light emitting devices in the two sub-pixels, the intensity of light produced remains relatively high due to increased turn on time of the operable drive transistor.

Abstract translation: 在具有缺陷驱动晶体管的子像素和具有可操作驱动晶体管的另一子像素之间建立修复路径，以并联连接两个子像素中的存储电容器。 建立另一修复路径以通过第二子像素的可操作驱动晶体管来操作发光器件。 两个像素中的存储电容器的端子连接到可操作驱动晶体管的栅极。 存储电容器的端子处的电压由于两个存储电容的组合电容而被保持高于可操作驱动晶体管的阈值电压更长时间的阈值电压。 因此，具有有缺陷驱动晶体管的子像素和可操作驱动晶体管的另一个子像素保持长时间导通。 因此，尽管为两个子像素中的每个发光器件提供较低电平的电流，但是由于可操作的驱动晶体管的导通时间的增加，产生的光的强度保持相对较高。