DISPLAY DEVICE
    1.
    发明申请

    公开(公告)号:US20230005425A1

    公开(公告)日:2023-01-05

    申请号:US17854776

    申请日:2022-06-30

    Abstract: A display device can include a display panel having sub pixels configured to emit light of different colors, a data driver configured to output a data voltage to the sub pixels via data lines, and a timing controller configured to output power control signals for controlling a driving current which drives the data driver. The data driver can include source driving integrated circuits, each including power control circuits configured to generate the driving current in accordance with each of the power control signals, and amplifiers configured to be applied with the driving current to output the data voltage to each of the data lines.

    DISPLAY DEVICE
    2.
    发明申请

    公开(公告)号:US20210150977A1

    公开(公告)日:2021-05-20

    申请号:US17095470

    申请日:2020-11-11

    Abstract: Embodiments of the disclosure concern display devices. The voltage line for supplying driving voltage to the cathode electrode of the light emitting element in the subpixel and the voltage line for supplying voltage for initializing the subpixel are integrated together. This allows for use of fewer voltage lines in the active area, along with easier arrangement of the voltage lines. The wire resistance may be reduced by adjusting the width of the voltage lines. The reduction in wire resistance may decrease brightness deviation or increase the aperture ratio or transmittance of the subpixel, thus allowing the display device higher light emission efficiency or transmittance.

    DISPLAY DEVICE
    3.
    发明申请

    公开(公告)号:US20240414958A1

    公开(公告)日:2024-12-12

    申请号:US18399919

    申请日:2023-12-29

    Inventor: JinSung KIM

    Abstract: A display device includes a light shield layer disposed on a substrate, a first buffer layer disposed on the light shield layer, a silicon layer disposed on the first buffer layer and including an undoped area and a doped area, a second buffer layer disposed on the silicon layer, and a thin film transistor disposed on the second buffer layer. The doped area is disposed at a position overlapping with the light shield layer. Accordingly, the display device can realize a wide range of grayscale representation and a fast on-off operation by adjusting the S-factor of a specific thin film transistor.

    THIN FILM TRANSISTOR, FABRICATION METHOD THEREOF, AND DISPLAY APPARATUS COMPRISING THE SAME

    公开(公告)号:US20230071089A1

    公开(公告)日:2023-03-09

    申请号:US17899657

    申请日:2022-08-31

    Abstract: A thin film transistor includes an active layer including an oxide semiconductor layer, a metal layer disposed on the active layer and overlapping with at least a portion of the active layer, a gate electrode spaced apart from the active layer, and overlapping with at least a portion of the active layer, and a gate insulating film between the active layer and the gate electrode, wherein the active layer includes a channel portion, a first connection portion contacting one side of the channel portion, and a second connection portion contacting the other side of the channel portion, and wherein the metal layer includes a first metal layer contacting an upper surface of the first connection portion, and a second metal layer contacting an upper surface of the second connection portion, a fabrication method of the thin film transistor, and a display apparatus comprising the same.

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