公开(公告)号：US20220262854A1

公开(公告)日：2022-08-18

申请号：US17736656

申请日：2022-05-04

Applicant: LG Display Co., Ltd.

Inventor： MoonHo PARK ,  Seunghyo KO

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/62 ,  H01L33/24

Abstract: A light emitting diode display apparatus includes a display substrate having a plurality of subpixel areas; and a light emitting diode disposed on the display substrate to correspond to a corresponding subpixel area of the plurality of subpixel areas, wherein the light emitting diode includes an emission area and a non-emission area adjacent to the emission area, wherein the light emitting diode includes a trench part provided to overlap a boundary between the emission area and the non-emission area, and wherein the trench part is configured such that a side light emitted from the emission area is reflected in a display direction of the light emitting diode display apparatus.

公开(公告)号：US20240008309A1

公开(公告)日：2024-01-04

申请号：US18211757

申请日：2023-06-20

Applicant: LG Display Co., Ltd.

Inventor： MoonHo PARK ,  Sangsoon NOH ,  Dongchae SHIN ,  SunYoung CHOI ,  Mijin JEONG

IPC: H10K59/121 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K59/40 ,  H10K59/80 ,  G06F3/041 ,  G06F3/044

CPC classification number: H10K59/1213 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  G09G3/3233 ,  H10K59/40 ,  H10K59/873 ,  G06F3/0412 ,  G06F3/0446 ,  H10K59/131

Abstract: A thin film transistor, in one or more examples, includes a semiconductor layer, an upper gate electrode overlapped with the semiconductor layer, an upper insulating layer disposed between the semiconductor layer and the upper gate electrode, a first lower gate electrode overlapped with the semiconductor layer, a second lower gate electrode disposed between the semiconductor layer and the first lower gate electrode, overlapped with the semiconductor layer, and configured to have a width smaller than that of the upper gate electrode, a first lower insulating layer disposed between the first lower gate electrode and the second lower gate electrode, and a second lower insulating layer disposed between the second lower gate electrode and the semiconductor layer. A display apparatus including a thin film transistor is also disclosed.

公开(公告)号：US20210150977A1

公开(公告)日：2021-05-20

申请号：US17095470

申请日：2020-11-11

Applicant: LG Display Co., Ltd.

Inventor： WonSang RYU ,  Jin Hee HEO ,  MoonHo PARK ,  JinSung KIM

IPC: G09G3/32 ,  H01L27/32

Abstract: Embodiments of the disclosure concern display devices. The voltage line for supplying driving voltage to the cathode electrode of the light emitting element in the subpixel and the voltage line for supplying voltage for initializing the subpixel are integrated together. This allows for use of fewer voltage lines in the active area, along with easier arrangement of the voltage lines. The wire resistance may be reduced by adjusting the width of the voltage lines. The reduction in wire resistance may decrease brightness deviation or increase the aperture ratio or transmittance of the subpixel, thus allowing the display device higher light emission efficiency or transmittance.