Abstract:
A method of preparing a display device including a plurality of pixels where a plurality of gate lines cross a plurality of data lines, respectively, each of the pixels including a thin film transistor (TFT) region and a display region, the method can include: forming a thin film transistor (TFT) in the TFT region; and forming a light emitting element for displaying images based on signals from the TFT in the display region, in which a metallic layer is disposed in the TFT region for electrical connection of the TFT; and a light absorbing layer configured to absorb at least part of light propagating toward the metallic layer is disposed on the metallic layer between the metallic layer and one of a gate insulating layer, an active layer, an interlayer dielectric layer and a substrate.
Abstract:
Provided is a display device including: a plurality of pixels where a plurality of gate lines cross a plurality of data lines, respectively, each of the pixels including a thin film transistor (TFT) region and a display region; a TFT formed in the TFT region; light emitting elements formed in the display region for displaying images based on signals from the TFT; a metallic layer disposed in the TFT region for electrical connection of the TFT; and a light absorbing layer disposed on the metallic layer and configured to absorb at least part of light propagating toward the metallic layer.