公开(公告)号：US11437454B2

公开(公告)日：2022-09-06

申请号：US16811713

申请日：2020-03-06

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Shun-Young Yang ,  Min-Seong Yun

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12

Abstract: Disclosed are a backplane substrate that is capable of expressing high gradation even through a small pixel, a method of manufacturing the same, and an organic light-emitting display device using the same. Integration for ultra-high resolution is possible through structural modification.

公开(公告)号：US10916610B2

公开(公告)日：2021-02-09

申请号：US16711250

申请日：2019-12-11

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Shun-Young Yang ,  Min-Seong Yun

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3225 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786

Abstract: Disclosed are a backplane substrate, which is devised to attain circuit characteristics for realizing sufficient gradation even in smaller pixels of a super-high-resolution structure, a manufacturing method for the same, and an organic light-emitting display device using the same, inn the backplane substrate, a driving thin-film transistor has a stack structure different from that of other thin-film transistors so that only the S-factor of the driving thin-film transistor is increased.

公开(公告)号：US10529787B2

公开(公告)日：2020-01-07

申请号：US15639743

申请日：2017-06-30

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Shun-Young Yang ,  Min-Seong Yun

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  G09G3/3225

Abstract: Disclosed are a backplane substrate, which is devised to attain circuit characteristics for realizing sufficient gradation even in smaller pixels of a super-high-resolution structure, a manufacturing method for the same, and an organic light-emitting display device using the same, inn the backplane substrate, a driving thin-film transistor has a stack structure different from that of other thin-film transistors so that only the S-factor of the driving thin-film transistor is increased.