公开(公告)号：US20170062545A1

公开(公告)日：2017-03-02

申请号：US15247414

申请日：2016-08-25

Applicant: LG Display Co., Ltd.

Inventor： KUM-MI OH ,  Hye-Seon Eom ,  Shun-Young Yang ,  Jeoung-In Lee

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3276 ,  H01L27/3246 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/56 ,  H01L2227/323

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capcacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

Abstract translation: 公开了能够实现具有足够的存储容量的像素内整合设计的有机发光显示装置及其制造方法，其中有机发光显示装置包括连接到驱动栅电极的第一有源层和数据 并且与第一有源层间隔开的第二有源层，同时与驱动栅电极重叠并连接到电流驱动线和存储电极。

公开(公告)号：US20160336419A1

公开(公告)日：2016-11-17

申请号：US15154400

申请日：2016-05-13

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Hye-Seon Eom ,  Shun-Young Yang ,  Jeoung-In Lee

IPC: H01L29/423 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/42384 ,  H01L27/1222 ,  H01L27/1285 ,  H01L29/78678 ,  H01L29/78696

Abstract: A thin film transistor includes a gate electrode on a substrate. The gate electrode includes a flat portion and an inclined portion at a side of the flat portion. A ratio of a height to a width (height/width) of the inclined portion is 1.192 or less. The thin film transistor also includes a gate insulating layer disposed on the substrate to cover the gate electrode and a polysilicon active layer on the gate insulating layer and over the gate electrode. The thin film transistor further includes a source electrode and a drain electrode respectively connected to two opposite end portions of the polysilicon active layer.

Abstract translation: 薄膜晶体管包括在基板上的栅电极。 栅极电极在平坦部分的一侧包括平坦部分和倾斜部分。 倾斜部的高度与宽度（高/宽）的比为1.192以下。 薄膜晶体管还包括设置在基板上以覆盖栅电极的栅极绝缘层和栅极绝缘层上以及栅极上的多晶硅有源层。 薄膜晶体管还包括分别连接到多晶硅有源层的两个相对端部的源电极和漏电极。

公开(公告)号：US11437454B2

公开(公告)日：2022-09-06

申请号：US16811713

申请日：2020-03-06

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Shun-Young Yang ,  Min-Seong Yun

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12

Abstract: Disclosed are a backplane substrate that is capable of expressing high gradation even through a small pixel, a method of manufacturing the same, and an organic light-emitting display device using the same. Integration for ultra-high resolution is possible through structural modification.

公开(公告)号：US10403705B2

公开(公告)日：2019-09-03

申请号：US16128669

申请日：2018-09-12

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Hye-Seon Eom ,  Shun-Young Yang ,  Jeoung-In Lee

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

公开(公告)号：US10916610B2

公开(公告)日：2021-02-09

申请号：US16711250

申请日：2019-12-11

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Shun-Young Yang ,  Min-Seong Yun

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3225 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786

Abstract: Disclosed are a backplane substrate, which is devised to attain circuit characteristics for realizing sufficient gradation even in smaller pixels of a super-high-resolution structure, a manufacturing method for the same, and an organic light-emitting display device using the same, inn the backplane substrate, a driving thin-film transistor has a stack structure different from that of other thin-film transistors so that only the S-factor of the driving thin-film transistor is increased.

公开(公告)号：US10529787B2

公开(公告)日：2020-01-07

申请号：US15639743

申请日：2017-06-30

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Shun-Young Yang ,  Min-Seong Yun

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  G09G3/3225

Abstract: Disclosed are a backplane substrate, which is devised to attain circuit characteristics for realizing sufficient gradation even in smaller pixels of a super-high-resolution structure, a manufacturing method for the same, and an organic light-emitting display device using the same, inn the backplane substrate, a driving thin-film transistor has a stack structure different from that of other thin-film transistors so that only the S-factor of the driving thin-film transistor is increased.

公开(公告)号：US10103213B2

公开(公告)日：2018-10-16

申请号：US15247414

申请日：2016-08-25

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Hye-Seon Eom ,  Shun-Young Yang ,  Jeoung-In Lee

IPC: H01L27/32 ,  H01L51/56

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capcacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.