Abstract:
A subpixel structure for a display device and a method of fabricating the display device are discussed. The subpixel structure can include a light emitting diode, a first switching transistor having a first gate electrode and a first active layer, a driving transistor having a second gate electrode and a second active layer, a second switching transistor including a third gate electrode and a third active layer, and at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and a substrate.
Abstract:
An electroluminescence display device lowers peak brightness of a screen image based on a preset peak luminance control (PLC) curve as an average picture level (APL) of the image is increased. The electroluminescence display device includes a memory and a timing controller. The memory stores an ELVDD reference profile for defining EVDD adjusting levels for adjusting a high-potential pixel voltage applied to pixels of the screen image in units of 1 image frame and an MDATA reference profile for defining Max data adjusting values for adjusting image data applied to the pixels of the screen image in the units of 1 image frame, for matching target peak brightness for each preset APL section with the PLC curve. The timing controller calculates an EVDD adjusting value and a Max data adjusting value of a first image frame based on an analysis result of image data of the first image frame and information stored in the memory and modulates image data of the first image frame based on the Max data adjusting value.