公开(公告)号：US11676970B2

公开(公告)日：2023-06-13

申请号：US17671452

申请日：2022-02-14

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan Ji ,  HongRak Choi ,  Jeyong Jeon ,  Jaeyoon Park

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/1288 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

公开(公告)号：US11621356B2

公开(公告)日：2023-04-04

申请号：US17406994

申请日：2021-08-19

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20180151114A1

公开(公告)日：2018-05-31

申请号：US15828194

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HongRak Choi ,  SeHee Park ,  PilSang Yun ,  HyungJoon Koo ,  Kwanghwan Ji ,  Jaeyoon Park

IPC: G09G3/325 ,  H01L27/32

Abstract: Disclosed are a transistor assembly, an organic light emitting display panel including the same, and an organic light emitting display device including the organic light emitting display panel, in which a first electrode of a switching transistor is used as a gate of a driving transistor.

公开(公告)号：US20240213375A1

公开(公告)日：2024-06-27

申请号：US18457520

申请日：2023-08-29

Applicant: LG Display Co., Ltd.

Inventor： Sungju Choi ,  Hyeonjoo Seul ,  Jinwon Jung ,  Jaeyoon Park

IPC: H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/7869

Abstract: A thin film transistor including an active layer; and a gate electrode at least partially overlapped with the active layer. Further, the active layer includes a first active layer and a second active layer on the first active layer; a channel; a first connection portion contacting a first side of the channel; and a second connection portion contacting a second side of the channel. In addition, the channel includes a first overlap area in which the first active layer and the second active layer overlap each other based on a plan view; and a first non-overlap area in which the first active layer and the second active layer do not overlap each other based on the plan view. Also, in the channel of the active layer, each of the first active layer and the second active layer extends from the first connection portion to the second connection portion. The second active layer also has a mobility greater than a mobility of the first active layer.

公开(公告)号：US11476281B2

公开(公告)日：2022-10-18

申请号：US16521906

申请日：2019-07-25

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  Jaeyoon Park ,  PilSang Yun ,  Jiyong Noh

IPC: H01L27/12 ,  H01L29/22

Abstract: An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.

公开(公告)号：US10741126B2

公开(公告)日：2020-08-11

申请号：US15828194

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HongRak Choi ,  SeHee Park ,  PilSang Yun ,  HyungJoon Koo ,  Kwanghwan Ji ,  Jaeyoon Park

IPC: G09G3/325 ,  H01L27/32 ,  H01L27/12 ,  G09G3/3233 ,  G02F1/1676

Abstract: Disclosed are a transistor assembly, an organic light emitting display panel including the same, and an organic light emitting display device including the organic light emitting display panel, in which a first electrode of a switching transistor is used as a gate of a driving transistor.

公开(公告)号：US12258663B2

公开(公告)日：2025-03-25

申请号：US18180585

申请日：2023-03-08

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon Park ,  JaeHyeon Park ,  KiHoon Park ,  PilSang Yun

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  H01L27/12

Abstract: Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

公开(公告)号：US11777037B2

公开(公告)日：2023-10-03

申请号：US17510066

申请日：2021-10-25

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak Cho ,  JungSeok Seo ,  SeHee Park ,  Jaeyoon Park ,  SangYun Sung

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10

CPC classification number: H01L29/78642 ,  H01L27/1225 ,  H01L29/1037 ,  H01L29/78663

Abstract: A transistor having a vertical structure can include a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate, an insulation pattern disposed between the first electrode and the second electrode, an active layer connected between the first electrode and the second electrode, a channel area of the active layer disposed along a side surface of the insulation pattern and around an upper edge of the insulation pattern, a gate electrode disposed on the active layer, and a gate insulating film disposed between the gate electrode and the active layer.

公开(公告)号：US20230220547A1

公开(公告)日：2023-07-13

申请号：US18180585

申请日：2023-03-08

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon Park ,  JaeHyeon Park ,  KiHoon Park ,  PilSang Yun

IPC: C23C16/455 ,  H01L27/12 ,  C23C16/44 ,  C23C16/40 ,  C23C16/448

CPC classification number: C23C16/45523 ,  H01L27/1262 ,  C23C16/4412 ,  C23C16/40 ,  C23C16/407 ,  C23C16/45561 ,  C23C16/4485 ,  C23C16/4481

Abstract: Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

公开(公告)号：US11171246B2

公开(公告)日：2021-11-09

申请号：US16705767

申请日：2019-12-06

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.