公开(公告)号：US11765935B2

公开(公告)日：2023-09-19

申请号：US16921432

申请日：2020-07-06

Applicant: LG Display Co., Ltd.

Inventor： Seong-Pil Cho ,  Dong-Yup Kim ,  Kyung-Mo Son ,  Sang-Soon Noh ,  Jun-Seuk Lee ,  Yong-Bin Kang ,  Kye-Chul Choi ,  Sung-Ho Moon ,  Sang-Gul Lee ,  Byeong-Keun Kim ,  Kyoung-Soo Lee ,  Hyun-Gyo Jeong ,  Jin-Kyu Roh ,  Jung-Doo Jin ,  Ki-Hyun Kwon ,  Hee-Jin Jung ,  Jang-Dae Kim ,  Won-Ho Son ,  Chan-Ho Kim

IPC: H01L27/14 ,  H10K59/121 ,  H01L27/12 ,  H01L29/786 ,  H01L29/49

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/7869 ,  H01L29/78675

Abstract: A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.