公开(公告)号：US08815692B2

公开(公告)日：2014-08-26

申请号：US13772454

申请日：2013-02-21

Applicant: LG Display Co., Ltd.

Inventor： Yongsoo Cho ,  Kyoho Moon ,  Byungyong Ahn ,  Chanki Ha

IPC: H01L21/336 ,  H01L21/02

CPC classification number: H01L33/0041 ,  H01L29/4908 ,  H01L29/66765

Abstract: A thin film transistor array substrate having excellent characteristics and a method for manufacturing the same are disclosed. The thin film transistor array substrate includes a substrate, a gate electrode positioned on the substrate, a gate insulating layer positioned on the gate electrode, an active layer which is positioned on the gate insulating layer and includes a channel, an ohmic contact layer positioned on the active layer, and a source electrode and a drain electrode which are respectively connected to both sides of the active layer through the ohmic contact layer. The gate insulating layer includes a phosphorus-doped layer positioned adjacent to the active layer.

Abstract translation: 公开了具有优异特性的薄膜晶体管阵列基板及其制造方法。 所述薄膜晶体管阵列基板包括基板，位于所述基板上的栅电极，位于所述栅电极上的栅极绝缘层，位于所述栅极绝缘层上并包括沟道的有源层，位于所述栅极绝缘层上的欧姆接触层 有源层，以及源电极和漏电极，分别通过欧姆接触层连接到有源层的两侧。 栅极绝缘层包括邻近有源层定位的磷掺杂层。