公开(公告)号：US09224846B2

公开(公告)日：2015-12-29

申请号：US14251717

申请日：2014-04-14

Applicant: LG ELECTRONICS INC.

Inventor： Jonghoon Shin ,  Woongsun Kim ,  Taehoon Jang

IPC: H01L21/338 ,  H01L29/778 ,  H01L29/66 ,  H01L21/02 ,  H01L29/20

CPC classification number: H01L29/7783 ,  H01L21/02241 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

Abstract: This specification relates to an enhancement-type semiconductor device having a passivation layer formed using a photoelectrochemical (PEC) method, and a fabricating method thereof.To this end, a semiconductor device according to one exemplary embodiment includes a GaN layer, an AlGaN layer formed on the GaN layer, a p-GaN layer formed on the AlGaN layer, a gate electrode formed on the p-GaN layer, a source electrode and a drain electrode formed on a partial region of the AlGaN layer, and a passivation layer formed on a partial region of the AlGaN layer, the passivation layer formed between the source electrode and the gate electrode or between the gate electrode and the drain electrode, wherein the passivation layer is formed in a manner of oxidizing a part of the p-GaN layer.

Abstract translation: 本说明书涉及具有使用光电化学（PEC）方法形成的钝化层的增强型半导体器件及其制造方法。 为此，根据一个示例性实施例的半导体器件包括GaN层，形成在GaN层上的AlGaN层，在AlGaN层上形成的p-GaN层，形成在p-GaN层上的栅电极，源极 电极和形成在AlGaN层的部分区域上的漏电极，以及形成在所述AlGaN层的部分区域上的钝化层，所述钝化层形成在所述源电极和所述栅电极之间或所述栅电极与所述漏电极之间 ，其中所述钝化层以氧化所述p-GaN层的一部分的方式形成。