公开(公告)号：US20200286949A1

公开(公告)日：2020-09-10

申请号：US16648860

申请日：2018-09-19

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl LEE ,  Chung Song KIM ,  Yong Tae MOON ,  Ji Hyung MOON ,  Sun Woo PARK ,  Hyeon Min CHO

IPC: H01L27/15 ,  H01L33/50

Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.

公开(公告)号：US20190378760A1

公开(公告)日：2019-12-12

申请号：US16475874

申请日：2018-01-05

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl LEE ,  Chung Song KIM ,  Ji Hyung MOON ,  Sun Woo PARK ,  Hyeon Min CHO

IPC: H01L21/78 ,  H01L27/15 ,  H01L21/52 ,  H01L21/268 ,  H05B33/10

Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.

公开(公告)号：US20210036187A1

公开(公告)日：2021-02-04

申请号：US16761008

申请日：2018-11-02

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl LEE ,  Chung Song KIM ,  Ji Hyung MOON ,  Sun Woo PARK ,  Hyeon Min CHO

IPC: H01L33/20 ,  H01L25/075 ,  H01L33/00 ,  H01L25/16

Abstract: Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.

公开(公告)号：US20190378873A1

公开(公告)日：2019-12-12

申请号：US16463730

申请日：2017-11-24

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl LEE ,  Chung Song KIM ,  Ji Hyung MOON ,  Sun Woo PARK ,  Hyeon Min CHO

IPC: H01L27/15 ,  H01L25/065

Abstract: One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.