THERMOELECTRIC ELEMENT
    1.
    发明公开

    公开(公告)号:US20240032427A1

    公开(公告)日:2024-01-25

    申请号:US18024374

    申请日:2021-09-02

    Inventor: In Seok KANG

    CPC classification number: H10N10/817

    Abstract: A thermoelectric element according to one embodiment of the present invention comprises: a first electrode; a metal layer arranged on the first electrode; a semiconductor structure arranged on the metal layer; and a conductive bonding layer arranged between the first electrode and the metal layer, wherein: the metal layer includes one surface facing the conductive bonding layer, and another surface facing the semiconductor structure; the one surface includes a plurality of recesses recessed toward the other surface; and the plurality of recesses extend in a first direction.

    THERMOELECTRIC ELEMENT
    3.
    发明申请

    公开(公告)号:US20220085267A1

    公开(公告)日:2022-03-17

    申请号:US17424574

    申请日:2020-01-23

    Abstract: A thermoelectric element of the present invention comprises a first metal substrate, a first resin layer, a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, a plurality of second electrodes, a second resin layer, and a second metal substrate, wherein the first metal substrate is a low-temperature portion, the second metal substrate is a high-temperature portion, the second resin layer comprises a first layer and a second layer arranged on the first layer, the first and second layers include a silicon (Si)-based resin, and the bonding strength of the first resin layer is higher than the bonding strength of the second resin layer.

    THERMOELECTRIC ELEMENT
    4.
    发明公开

    公开(公告)号:US20240099140A1

    公开(公告)日:2024-03-21

    申请号:US18256767

    申请日:2021-11-30

    Inventor: In Seok KANG

    CPC classification number: H10N10/817 H10N10/17

    Abstract: According to an embodiment, disclosed is a thermoelectric element comprising: an electrode; a semiconductor structure arranged on the electrode; a diffusion barrier layer arranged on the bottom surface of the semiconductor structure, and having an opening part; a metal layer arranged on the bottom surface of the diffusion barrier layer; and a conductive bonding layer arranged between the metal layer and the electrode, wherein a part of the metal layer extends to the inside of the opening part of the diffusion barrier layer so as to be electrically connected to the semiconductor structure.

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