THERMOELECTRIC ELEMENT
    1.
    发明公开

    公开(公告)号:US20230165148A1

    公开(公告)日:2023-05-25

    申请号:US17916318

    申请日:2021-03-25

    CPC classification number: H10N10/817 H10N10/17

    Abstract: A thermoelectric element according to one embodiment of the present invention includes a first substrate, a first insulating layer disposed on the first substrate, first electrodes disposed on the first insulating layer, a plurality of semiconductor structures disposed on the first electrodes, and second electrodes disposed on the plurality of semiconductor structures, wherein an average value of absolute values of lengths from a center line to a profile curve of a rough surface of at least a part of an upper surface of the first insulating layer is in the range of 1 to 5 μm.

    THERMOELECTRIC DEVICE
    2.
    发明申请

    公开(公告)号:US20230041393A1

    公开(公告)日:2023-02-09

    申请号:US17757920

    申请日:2020-12-16

    Abstract: A thermoelectric element according to one embodiment of the present disclosure includes a first substrate, a first buffer layer disposed on the first substrate, a first electrode disposed on the first buffer layer, a P-type thermoelectric leg and an N-type thermoelectric leg disposed on the first electrode, a second electrode disposed on the P-type thermoelectric leg and the N-type thermoelectric leg, a second buffer layer disposed on the second electrode, and a second substrate disposed on the second buffer layer, wherein at least one of the first buffer layer and the second buffer layer includes a silicone resin and an inorganic material, and the Young's modulus of at least one of the first buffer layer and the second buffer layer is 1 to 65 MPa.

    THERMOELECTRIC ELEMENT
    3.
    发明申请

    公开(公告)号:US20230122056A1

    公开(公告)日:2023-04-20

    申请号:US17907364

    申请日:2021-03-18

    Inventor: Seung Hwan LEE

    Abstract: A thermoelectric element according to one example of the present invention comprises: a first substrate; a first insulating layer disposed on the first substrate; a first bonding layer disposed on the first insulating layer; a second insulating layer disposed on the first bonding layer; a first electrode disposed on the second insulating layer; a P-type thermoelectric leg and N-type thermoelectric leg, disposed on the first electrode; a second electrode disposed on the P-type thermoelectric leg and N-type thermoelectric leg; a third insulating layer disposed on the second electrode; and a second substrate disposed on the third insulating layer, wherein the first insulating layer is composed of a composite comprising silicon and aluminum, the second insulating layer is a resin layer composed of a resin composition comprising an inorganic filler and at least one of an epoxy resin and a silicone resin, and the first bonding layer comprises a silane coupling agent.

    THERMOELECTRIC ELEMENT
    4.
    发明申请

    公开(公告)号:US20220085267A1

    公开(公告)日:2022-03-17

    申请号:US17424574

    申请日:2020-01-23

    Abstract: A thermoelectric element of the present invention comprises a first metal substrate, a first resin layer, a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, a plurality of second electrodes, a second resin layer, and a second metal substrate, wherein the first metal substrate is a low-temperature portion, the second metal substrate is a high-temperature portion, the second resin layer comprises a first layer and a second layer arranged on the first layer, the first and second layers include a silicon (Si)-based resin, and the bonding strength of the first resin layer is higher than the bonding strength of the second resin layer.

    THERMOELECTRIC ELEMENT
    5.
    发明申请

    公开(公告)号:US20210249578A1

    公开(公告)日:2021-08-12

    申请号:US17252062

    申请日:2019-06-05

    Abstract: A thermoelectric element according to one embodiment of the present invention comprises: a first metal substrate; a first resin layer which is arranged on the first metal substrate and which comes into direct contact with the first metal substrate; a plurality of first electrodes arranged on the first resin layer; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs which are arranged on the plurality of first electrodes; a plurality of second electrodes arranged on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a second resin layer arranged on the plurality of second electrodes; and a second metal substrate which is arranged on the second resin layer and which comes into direct contact with the second resin layer, wherein the adhesion strength between the first resin layer and the plurality of first electrodes differs from the adhesion strength between the second resin layer and the plurality of second electrodes.

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