公开(公告)号：US20200066938A1

公开(公告)日：2020-02-27

申请号：US16348601

申请日：2017-11-10

Applicant: LG INNOTEK CO., LTD.

Inventor： Jun Seok SEONG ,  Byeong Kyun CHOI ,  Ku HYUN

IPC: H01L33/40 ,  H01L33/00 ,  H01L33/24 ,  H01L33/44 ,  H01L33/62

Abstract: An embodiment provides a semiconductor element, which comprises: a plurality of semiconductor structures, each of which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess extending through the second conductive semiconductor layer and the active layer to a partial area of the first conductive semiconductor layer; a second recess disposed between the plurality of semiconductor structures; a first electrode disposed at the first recess and electrically connected to the first conductive semiconductor layer; a reflective layer disposed under the second conductive semiconductor layer; and a protrusion part disposed on the second recess and protruding higher than the upper surfaces of the semiconductor structures, wherein a surface, on which the first electrode contacts the first conductive semiconductor layer in the first recess, is 300 to 500 nm distant from the upper surfaces of the semiconductor structures.