Abstract:
A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3=1:0.9˜1.1:1.
Abstract:
A circuit board, according to an embodiment, comprises: a first insulating layer; a second insulating layer disposed on one surface of the first insulating layer; and a third insulating layer disposed on the other surface of the first insulating layer. A circuit pattern is disposed on at least one insulating layer from among the first to third insulating layers, at least one insulating layer from among the first to third insulating layers comprises glass fiber, at least one insulating layer from among the first to third insulating layers does not comprise glass fiber, and the thicknesses of the first to third insulating layers are different from each other.
Abstract:
Disclosed is a light emitting device. The light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer and a light extraction structure formed on the first conductivity-type semiconductor layer, and the light extraction structure includes a plurality of cylinders and a void is formed in each cylinder.
Abstract:
Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. A first electrode is connected to the first conductive type semiconductor layer and includes first pad, plurality of first bridge portions and plurality of first contact portions. A current spreading layer is on a top surface of the second conductive type semiconductor layer. An insulation layer is on an upper surface of the first conductive type semiconductor layer and a top surface of the current spreading layer. A second electrode is on a top surface of the current spreading layer. The plurality of first bridge portions are extended from the first pad at an acute angle to each other.
Abstract:
A circuit board according to an embodiment includes an insulating layer, a first circuit pattern layer disposed on the insulating layer; a second circuit pattern layer disposed below the insulating layer; and a via passing through the insulating layer and connecting the first circuit pattern layer and the second circuit pattern layer, wherein the via has a first width at an upper surface and a second width less than the first width at a first region between the upper surface and a lower surface, wherein the first region is a region with a minimum width among all regions of the via, and wherein the second width satisfies a range of 70% to 99% of the first width.
Abstract:
A printed circuit board according to an embodiment includes: an insulating layer; and a circuit pattern disposed on the insulating layer, wherein the circuit pattern includes an upper surface, a lower surface, a first side surface, and a second side surface, and surface roughness Ra of at least three surfaces of the upper surface, the lower surface, the first side surface, and the second side surface of the circuit pattern is 0.1 μm to 0.31 μm.
Abstract:
A resin composition for a semiconductor package according to an embodiment includes a resin composition that is a composite of a resin and a filler disposed in the resin, wherein the filler includes at least one concave portion provided on a surface, wherein a content of the filler has a range of 10 vol. % to 40 vol % of a total volume of the resin composition, and wherein a porosity corresponds to a volume occupied by the concave portion in a total volume of the filler and has a range of 20% to 35%.
Abstract:
A circuit board according to an embodiment includes an insulating layer; and a via portion disposed in a via hole formed in the insulating layer; wherein the via portion includes: a first pad disposed on a lower surface of the insulating layer; a second pad disposed on an upper surface of the insulating layer; a third pad disposed in the via hole and disposed on the first pad; and a connection portion disposed in the via hole and disposed between the second pad and the third pad.
Abstract:
A circuit board according to one embodiment comprises a first insulation layer, a circuit pattern on the first insulation layer, and a second insulation layer on the circuit pattern, wherein a heat transfer member is arranged inside the first insulation layer and/or the second insulation layer, and the heat transfer member is arranged while coming in contact with a side surface of the insulation layer.
Abstract:
An embodiment provides a semiconductor element, which comprises: a plurality of semiconductor structures, each of which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess extending through the second conductive semiconductor layer and the active layer to a partial area of the first conductive semiconductor layer; a second recess disposed between the plurality of semiconductor structures; a first electrode disposed at the first recess and electrically connected to the first conductive semiconductor layer; a reflective layer disposed under the second conductive semiconductor layer; and a protrusion part disposed on the second recess and protruding higher than the upper surfaces of the semiconductor structures, wherein a surface, on which the first electrode contacts the first conductive semiconductor layer in the first recess, is 300 to 500 nm distant from the upper surfaces of the semiconductor structures.