公开(公告)号：US20190259951A1

公开(公告)日：2019-08-22

申请号：US16332910

申请日：2017-08-22

Applicant: LG INNOTEK CO., LTD.

Inventor： Dong Mug SEONG ,  Jong Min YUN ,  Su Hyeon CHO ,  Hae Sik KIM ,  Tae Hoon HAN ,  Hyo Won SON ,  Sang Yu LEE ,  Sang Beum LEE

IPC: H01L51/00 ,  C23F1/02 ,  H01L51/56 ,  H01L21/027 ,  H01L21/203 ,  C23C14/04

Abstract: A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.

公开(公告)号：US20220190250A1

公开(公告)日：2022-06-16

申请号：US17688129

申请日：2022-03-07

Applicant: LG INNOTEK CO., LTD.

Inventor： Dong Mug SEONG ,  Jong Min YUN ,  Su Hyeon CHO ,  Hae Sik KIM ,  Tae Hoon HAN ,  Hyo Won SON ,  Sang Yu LEE ,  Sang Beum LEE

IPC: H01L51/00 ,  H01L51/56 ,  H01L21/475 ,  C23C14/04 ,  H01L21/203 ,  C23F1/02 ,  H01L21/027

Abstract: A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.