公开(公告)号：US11888000B2

公开(公告)日：2024-01-30

申请号：US17470178

申请日：2021-09-09

申请人： LG INNOTEK CO., LTD.

发明人： Mark Allen Itzler ,  Brian Piccione ,  Xudong Jiang ,  Krystyna Slomkowski

IPC分类号： H01L27/144 ,  H01L31/107 ,  H01L27/146 ,  H01L31/02 ,  G01J1/44 ,  H01C7/00

CPC分类号： H01L27/1446 ,  G01J1/44 ,  H01L31/02027 ,  H01L31/107 ,  G01J2001/448 ,  G01J2001/4466 ,  H01C7/006 ,  H01L27/14609

摘要： A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

公开(公告)号：US11961870B2

公开(公告)日：2024-04-16

申请号：US17670176

申请日：2022-02-11

申请人： LG INNOTEK CO., LTD.

发明人： Brian Piccione ,  Mark Itzler ,  Xudong Jiang ,  Krystyna Slomkowski ,  Harold Y. Hwang ,  John L. Hostetler

IPC分类号： H01L27/14 ,  H01L27/146

CPC分类号： H01L27/14665 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14694

摘要： Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

公开(公告)号：US12125857B2

公开(公告)日：2024-10-22

申请号：US17581464

申请日：2022-01-21

申请人： LG INNOTEK CO., LTD.

发明人： Mark Allen Itzler ,  Brian Piccione ,  Xudong Jiang ,  Krystyna Slomkowski

IPC分类号： H01L27/144 ,  G01J1/44 ,  H01L31/02 ,  H01L31/107 ,  H01C7/00 ,  H01L27/146

CPC分类号： H01L27/1446 ,  G01J1/44 ,  H01L31/02027 ,  H01L31/107 ,  G01J2001/4466 ,  G01J2001/448 ,  H01C7/006 ,  H01L27/14609

摘要： A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.