公开(公告)号：US20020086468A1

公开(公告)日：2002-07-04

申请号：US09998338

申请日：2001-12-03

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Hae-Yeol Kim ,  Binn Kim ,  Joon-Young Yang ,  Sang-Soo Han

IPC: H01L021/00

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

Abstract: The present invention discloses a method of crystallizing amorphous silicon using a metal catalyst. More specifically, the method includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon film, forming a heat insulating layer on the amorphous silicon layer including the metal clusters, disposing a pair of electrodes on the heat insulating layer, simultaneously applying a thermal treatment and a voltage to crystallize the amorphous silicon, and removing the heat insulating layer including the electrodes from the substrate.

Abstract translation: 本发明公开了一种使用金属催化剂使非晶硅结晶的方法。 更具体地说，该方法包括在衬底上形成非晶硅层，在非晶硅膜上形成多个金属簇，在包括金属簇的非晶硅层上形成隔热层，在电极上设置一对电极 绝缘层，同时施加热处理和电压以使非晶硅结晶，以及从基板去除包括电极的隔热层。