公开(公告)号：US20020086470A1

公开(公告)日：2002-07-04

申请号：US10000092

申请日：2001-12-04

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Hae-Yeol Kim ,  Jong-Il Kim ,  Se-June Kim

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method of crystallizing amorphous silicon includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon layer, and simultaneously applying a thermal treatment, an electric field, and a magnetic field to crystallize the amorphous silicon layer.

Abstract translation: 结晶非晶硅的方法包括在衬底上形成非晶硅层，在非晶硅层上形成多个金属簇，同时施加热处理，电场和磁场以使非晶硅层结晶。

公开(公告)号：US20020086468A1

公开(公告)日：2002-07-04

申请号：US09998338

申请日：2001-12-03

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Hae-Yeol Kim ,  Binn Kim ,  Joon-Young Yang ,  Sang-Soo Han

IPC: H01L021/00

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

Abstract: The present invention discloses a method of crystallizing amorphous silicon using a metal catalyst. More specifically, the method includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon film, forming a heat insulating layer on the amorphous silicon layer including the metal clusters, disposing a pair of electrodes on the heat insulating layer, simultaneously applying a thermal treatment and a voltage to crystallize the amorphous silicon, and removing the heat insulating layer including the electrodes from the substrate.

Abstract translation: 本发明公开了一种使用金属催化剂使非晶硅结晶的方法。 更具体地说，该方法包括在衬底上形成非晶硅层，在非晶硅膜上形成多个金属簇，在包括金属簇的非晶硅层上形成隔热层，在电极上设置一对电极 绝缘层，同时施加热处理和电压以使非晶硅结晶，以及从基板去除包括电极的隔热层。