公开(公告)号：US20040109110A1

公开(公告)日：2004-06-10

申请号：US10716562

申请日：2003-11-20

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Se-Jun Kim ,  Seung-Ryul Park

IPC: G02F001/1335

CPC classification number: G02F1/1362 ,  G02F1/136227 ,  G02F2001/136222

Abstract: An array substrate of a liquid crystal display device having a thin film transistor on a color filter structure and a method of fabricating the same are disclosed in the present invention. The liquid crystal display device having a thin film transistor on color filter structure array substrate includes a gate line and a gate electrode on a substrate, the gate line and the gate electrode being formed of a light-shielding material, a color filter layer on the substrate, covering edge portions of the gate line and the gate electrode, an overcoat layer over the substrate covering the color filter, the overcoat layer having openings exposing portions of the gate line and the gate electrode, a gate insulating layer on the overcoat layer, the color filter layer, the gate line, and the gate electrode, a semiconductor layer on the gate insulating layer, wherein the semiconductor layer has a width smaller than the gate electrode, source and drain electrodes on the gate insulating layer, contacting portions of the semiconductor layer, wherein the gate electrode, the semiconductor layer, the source electrode, and the drain electrode constitute a thin film transistor, a data line on the gate insulating layer, extending from the source electrode, crossing the gate line, and defining a pixel region, a passivation layer covering the thin film transistor and the data line and having a drain contact hole exposing a portion of the drain electrode, and a pixel electrode on the passivation layer, contacting the drain electrode through the drain contact hole.

Abstract translation: 在本发明中公开了具有滤色器结构上的薄膜晶体管的液晶显示装置的阵列基板及其制造方法。 在滤色器结构阵列基板上具有薄膜晶体管的液晶显示装置在基板上具有栅极线和栅电极，栅极线和栅电极由遮光材料形成，滤色器层 基板，栅极线和栅电极的覆盖边缘部分，覆盖滤色器的基板上的外涂层，覆盖层具有露出栅极线和栅电极的部分的开口，外涂层上的栅极绝缘层， 所述滤色器层，所述栅极线和所述栅极电极，所述栅极绝缘层上的半导体层，其中所述半导体层的宽度小于所述栅极电极，所述栅极绝缘层上的源极和漏极，所述栅极绝缘层的接触部分 半导体层，其中栅电极，半导体层，源电极和漏电极构成薄膜晶体管，数据线在 所述栅极绝缘层从所述源极延伸，与所述栅极线交叉并且限定像素区域，覆盖所述薄膜晶体管和所述数据线的钝化层，并且具有暴露所述漏极的一部分的漏极接触孔，以及 钝化层上的像素电极，通过漏极接触孔与漏电极接触。