公开(公告)号：US20180308739A1

公开(公告)日：2018-10-25

申请号：US15768652

申请日：2017-03-02

Applicant: LINTEC CORPORATION

Inventor： Tomochika TOMINAGA ,  Katsuhiko HORIGOME

IPC: H01L21/683 ,  H01L21/78 ,  C09J7/25 ,  C09J7/50 ,  C09J7/38 ,  B23K26/53

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 μm or less.

公开(公告)号：US20190385889A1

公开(公告)日：2019-12-19

申请号：US16558607

申请日：2019-09-03

Applicant: LINTEC CORPORATION

Inventor： Tomochika TOMINAGA ,  Katsuhiko HORIGOME

IPC: H01L21/683 ,  B23K26/53 ,  C09J7/38 ,  C09J7/25 ,  C09J7/50 ,  H01L21/78

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 μm or less.