公开(公告)号：US20180308739A1

公开(公告)日：2018-10-25

申请号：US15768652

申请日：2017-03-02

Applicant: LINTEC CORPORATION

Inventor： Tomochika TOMINAGA ,  Katsuhiko HORIGOME

IPC: H01L21/683 ,  H01L21/78 ,  C09J7/25 ,  C09J7/50 ,  C09J7/38 ,  B23K26/53

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 μm or less.

公开(公告)号：US20190385889A1

公开(公告)日：2019-12-19

申请号：US16558607

申请日：2019-09-03

Applicant: LINTEC CORPORATION

Inventor： Tomochika TOMINAGA ,  Katsuhiko HORIGOME

IPC: H01L21/683 ,  B23K26/53 ,  C09J7/38 ,  C09J7/25 ,  C09J7/50 ,  H01L21/78

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 μm or less.

公开(公告)号：US20230380288A1

公开(公告)日：2023-11-23

申请号：US18034442

申请日：2021-10-28

Applicant: LINTEC CORPORATION

Inventor： Yuta SEKI ,  Kunihisa KATO ,  Wataru MORITA ,  Katsuhiko HORIGOME ,  Mutsumi MASUMOTO

IPC: H10N10/17

CPC classification number: H10N10/17

Abstract: Provided is a thin thermoelectric conversion module provided with no support base material and including: an integrated body including an insulator configured to fill a gap defined by a chip of a P-type thermoelectric conversion material and a chip of an N-type thermoelectric conversion material, the chips being alternately arranged and spaced apart from each other; a common first electrode provided on one surface of the integrated body and joining one surface of the chip of the P-type thermoelectric conversion material and one surface of the chip of the N-type thermoelectric conversion material; and a common second electrode provided on another surface of the integrated body, facing the first electrode, and joining another surface of the chip of the N-type thermoelectric conversion material and another surface of the chip of the P-type thermoelectric conversion material, in which the first electrode and the second electrode provide electrically serial connection between the chip of the P-type thermoelectric conversion material and the chip of the N-type thermoelectric conversion material, and both surfaces of the thermoelectric conversion module are provided with no base material.

公开(公告)号：US20190382633A1

公开(公告)日：2019-12-19

申请号：US16338505

申请日：2017-09-26

Applicant: LINTEC Corporation

Inventor： Kazuto AIZAWA ,  Jun MAEDA ,  Katsuhiko HORIGOME

IPC: C09J133/00 ,  C09J201/00 ,  C09J7/24 ,  C09J7/29 ,  H01L21/304 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00

Abstract: The pressure sensitive adhesive tape for semiconductor processing includes a base which has a Young's modulus of 1000 MPa or more at 23° C., a buffer layer which is provided on at least one surface of this base, and a pressure sensitive adhesive layer provided on the other surface of the base. The buffer layer has a tensile storage elastic modulus (E23) of 100-2000 MPa at 23° C., and a tensile storage elastic modulus (E60) of 20-1000 MPa at 60° C.