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公开(公告)号：US06474139B2
公开(公告)日：2002-11-05
申请号：US10068520
申请日：2002-02-06
IPC分类号： G01N2700
CPC分类号： G01N27/129
摘要： A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
摘要翻译： 公开了一种包括SiC半导体衬底的可燃气体传感器二极管，其上沉积有AlN层和催化金属“栅极”电极。 可燃气体传感器二极管可以在直流正向传导模式或交流反向偏置模式下工作。 进一步公开了在直流和交流模式下检测可燃物的方法。
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公开(公告)号：US06418784B1
公开(公告)日：2002-07-16
申请号：US09415093
申请日：1999-10-08
IPC分类号： H01L310312
CPC分类号： G01N27/16
摘要： A substrate covered with an insulating layer and a catalytic gate electrode 26 disposed on the insulating layer. The catalytic gate electrode 26 has a first end having a first contact pad 30 and a second end having a second contact pad 32. A meander 28 is placed between the first contact and the second contact. A third contact pad 24 is coupled to the underside of the substrate 22. The temperature is measured between the first contact pad 30 and second contact pad 32 while sensor's response to gas concentration is sensed between the gate electrode 26 and the third contact 24.
摘要翻译： 覆盖有绝缘层的基板和设置在绝缘层上的催化栅电极26。 催化栅电极26具有第一端，其具有第一接触焊盘30和具有第二接触焊盘32的第二端。弯曲部28被放置在第一接触部和第二接触部之间。 第三接触焊盘24连接到衬底22的下侧。在第一接触焊盘30和第二接触焊盘32之间测量温度，同时在栅电极26和第三接触件24之间感测传感器对气体浓度的响应。
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公开(公告)号：US06378355B2
公开(公告)日：2002-04-30
申请号：US09891643
申请日：2001-06-25
IPC分类号： G01N2700
CPC分类号： G01N27/129
摘要： A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
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公开(公告)号：US06298710B1
公开(公告)日：2001-10-09
申请号：US09026776
申请日：1998-02-20
IPC分类号： G01N2700
CPC分类号： G01N27/129
摘要： A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
摘要翻译： 公开了一种包括SiC半导体衬底的可燃气体传感器二极管，其上沉积有AlN层和催化金属“栅极”电极。 可燃气体传感器二极管可以在直流正向传导模式或交流反向偏置模式下工作。 进一步公开了在直流和交流模式下检测可燃物的方法。
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公开(公告)号：US06297138B1
公开(公告)日：2001-10-02
申请号：US09005607
申请日：1998-01-12
IPC分类号： H01L2144
CPC分类号： C23C14/16 , C23C14/28 , H01L29/66068
摘要： A method for depositing a metal film onto the semiconductor substrate and insulator of a MOS sensor is provided. The method utilizes a laser ablation technique to deposit metal films having a desired thickness and roughness to enhance the reliability and sensitivity of a MOS sensor to combustible gases.
摘要翻译： 提供了一种在MOS传感器的半导体衬底和绝缘体上沉积金属膜的方法。 该方法利用激光烧蚀技术沉积具有所需厚度和粗糙度的金属膜，以增强MOS传感器对可燃气体的可靠性和灵敏度。
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