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公开(公告)号：US06474139B2
公开(公告)日：2002-11-05
申请号：US10068520
申请日：2002-02-06
IPC分类号： G01N2700
CPC分类号： G01N27/129
摘要： A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
摘要翻译： 公开了一种包括SiC半导体衬底的可燃气体传感器二极管，其上沉积有AlN层和催化金属“栅极”电极。 可燃气体传感器二极管可以在直流正向传导模式或交流反向偏置模式下工作。 进一步公开了在直流和交流模式下检测可燃物的方法。
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公开(公告)号：US06418784B1
公开(公告)日：2002-07-16
申请号：US09415093
申请日：1999-10-08
IPC分类号： H01L310312
CPC分类号： G01N27/16
摘要： A substrate covered with an insulating layer and a catalytic gate electrode 26 disposed on the insulating layer. The catalytic gate electrode 26 has a first end having a first contact pad 30 and a second end having a second contact pad 32. A meander 28 is placed between the first contact and the second contact. A third contact pad 24 is coupled to the underside of the substrate 22. The temperature is measured between the first contact pad 30 and second contact pad 32 while sensor's response to gas concentration is sensed between the gate electrode 26 and the third contact 24.
摘要翻译： 覆盖有绝缘层的基板和设置在绝缘层上的催化栅电极26。 催化栅电极26具有第一端，其具有第一接触焊盘30和具有第二接触焊盘32的第二端。弯曲部28被放置在第一接触部和第二接触部之间。 第三接触焊盘24连接到衬底22的下侧。在第一接触焊盘30和第二接触焊盘32之间测量温度，同时在栅电极26和第三接触件24之间感测传感器对气体浓度的响应。
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公开(公告)号：US5383333A
公开(公告)日：1995-01-24
申请号：US132267
申请日：1993-10-06
CPC分类号： F02D41/1476 , F02D41/1441
摘要： A system for maintaining engine air/fuel operation within the efficiency window of a catalytic converter. Fuel delivered to the engine is adjusted in response to a step change in an output of an exhaust gas oxygen sensor positioned upstream of the converter. The step change is shifted in response to an error signal derived from a downstream emissions sensor.
摘要翻译： 一种用于在催化转化器的效率窗口内维持发动机空气/燃料运行的系统。 响应于位于转换器上游的排气氧传感器的输出的阶跃变化来调节输送到发动机的燃料。 响应于从下游发射传感器得到的误差信号，阶跃变化被移动。
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公开(公告)号：US5379590A
公开(公告)日：1995-01-10
申请号：US132407
申请日：1993-10-06
CPC分类号： F02D41/1476 , F02D41/1441
摘要： A control system for maintaining engine air/fuel operation within the efficiency window of a catalytic converter. An exhaust gas oxygen sensor having a step change between first and second output states and positioned downstream of the converter. A step change in the downstream sensor output is initialized to an initial air/fuel ratio by pumping current through one of the sensing electrodes of the downstream sensor. An emission control signal is derived from the initialized downstream sensor output to bias an air/fuel feedback loop.
摘要翻译： 一种用于在催化转化器的效率窗口内维持发动机空气/燃料运行的控制系统。 一种废气氧传感器，其具有在第一和第二输出状态之间并位于转换器下游的台阶变化。 下游传感器输出中的阶跃变化通过泵送通过下游传感器的感测电极之一的电流而初始化为初始空气/燃料比。 从初始化的下游传感器输出导出排放控制信号以偏置空气/燃料反馈回路。
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5.发明授权
公开(公告)号：US5406906A
公开(公告)日：1995-04-18
申请号：US181717
申请日：1994-01-18
申请人： Lajos Rimai , Richard M. Ager , Willes H. Weber
发明人： Lajos Rimai , Richard M. Ager , Willes H. Weber
IPC分类号： C30B23/00 , C30B23/02 , H01L21/20 , H01L21/203 , C30B25/10
CPC分类号： C30B23/02 , C30B29/36 , Y10S117/904
摘要： A crystalline silicon carbide film is grown on a heated crystalline silicon substrate by laser ablation of a pure carbon target. For substrate temperatures during deposition above 1000.degree. C. and single crystal silicon substrates the resulting SiC film is expitaxially oriented with respect to the substrate. Films of stoichiometric SiC are grown up to thicknesses of about 4000.ANG.. These films grow on top of the silicon substrate and whereas the source of carbon for the film is from the ablation plume of the carbon target the source of the silicon is from the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 .mu.m with part of the silicon being supplied by the ablation plume of the silicon target.
摘要翻译： 通过纯碳靶的激光烧蚀，在加热的晶体硅衬底上生长结晶碳化硅膜。 对于高于1000℃的沉积期间的衬底温度和单晶硅衬底，所得到的SiC膜相对于衬底被外延取向。 化学计量的SiC的膜生长至约4000安培的厚度。 这些膜在硅衬底的顶部生长，而膜的碳源来自碳靶的消融羽流，硅源来自衬底。 通过使用纯碳和纯硅靶的交替烧蚀的方法，可以将类似的外延膜生长至超过1μm的厚度，其中一部分硅由硅靶的消融羽提供。
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公开(公告)号：US5281313A
公开(公告)日：1994-01-25
申请号：US33732
申请日：1993-03-18
IPC分类号： G01N27/416 , G01N27/419 , G01N27/26
CPC分类号： G01N27/419
摘要： A method of operating a selective combustible sensor having a pump cell and a sensor cell includes the steps of immersing the sensor in a gaseous atmosphere having at least two combustible gases and oxygen gas and allowing the gaseous atmosphere to enter a region between the pump cell and the sensor cell, applying a pumping current to the pump cell, sensing an e.m.f. (V.sub.s), across the sensor cell, varying at least either the V.sub.s or temperature to make the sensor insensitive to one of the combustible gases, and detecting the other combustible gases present in the gaseous atmosphere.
摘要翻译： 一种操作具有泵浦电池和传感器电池的选择性可燃性传感器的方法包括以下步骤：将传感器浸入具有至少两种可燃气体和氧气的气氛中，并允许气态气体进入泵室和泵室之间的区域 传感器单元，向泵浦单元施加泵送电流，感测电动势 （Vs），跨越传感器单元，至少改变Vs或温度，以使传感器对可燃气体之一不敏感，并且检测存在于气体气氛中的其它可燃气体。
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公开(公告)号：US06378355B2
公开(公告)日：2002-04-30
申请号：US09891643
申请日：2001-06-25
IPC分类号： G01N2700
CPC分类号： G01N27/129
摘要： A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
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公开(公告)号：US06298710B1
公开(公告)日：2001-10-09
申请号：US09026776
申请日：1998-02-20
IPC分类号： G01N2700
CPC分类号： G01N27/129
摘要： A combustible gas sensor diode including a SiC semiconductor substrate, on top of which an AlN layer and a catalytic metal “gate” electrode are deposited is disclosed. The combustible gas sensor diode can be operated in either a D.C. forward conduction mode or an A.C. reverse bias mode. Methods of detecting combustibles in both D.C. and A.C. modes are further disclosed.
摘要翻译： 公开了一种包括SiC半导体衬底的可燃气体传感器二极管，其上沉积有AlN层和催化金属“栅极”电极。 可燃气体传感器二极管可以在直流正向传导模式或交流反向偏置模式下工作。 进一步公开了在直流和交流模式下检测可燃物的方法。
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公开(公告)号：US06297138B1
公开(公告)日：2001-10-02
申请号：US09005607
申请日：1998-01-12
IPC分类号： H01L2144
CPC分类号： C23C14/16 , C23C14/28 , H01L29/66068
摘要： A method for depositing a metal film onto the semiconductor substrate and insulator of a MOS sensor is provided. The method utilizes a laser ablation technique to deposit metal films having a desired thickness and roughness to enhance the reliability and sensitivity of a MOS sensor to combustible gases.
摘要翻译： 提供了一种在MOS传感器的半导体衬底和绝缘体上沉积金属膜的方法。 该方法利用激光烧蚀技术沉积具有所需厚度和粗糙度的金属膜，以增强MOS传感器对可燃气体的可靠性和灵敏度。
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