公开(公告)号：US20210335617A1

公开(公告)日：2021-10-28

申请号：US17312594

申请日：2019-12-13

Applicant: Lam Research Corporation

Inventor： Ruopeng Deng ,  Xiaolan Ba ,  Tianhua Yu ,  Yu Pan ,  Juwen Gao

IPC: H01L21/285 ,  H01L21/768

Abstract: Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.

公开(公告)号：US12237221B2

公开(公告)日：2025-02-25

申请号：US17595590

申请日：2020-05-18

Applicant: Lam Research Corporation

Inventor： Sema Ermez ,  Ruopeng Deng ,  Yutaka Nishioka ,  Xiaolan Ba ,  Sanjay Gopinath ,  Michal Danek

IPC: H01L21/768 ,  C23C16/08 ,  C23C16/455 ,  H01L21/285

Abstract: Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal reducing agent layer of boron (B) and/or silicon (Si) on a substrate. The substrate generally includes a feature to be filled with tungsten with the reducing agent layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a fluorine-containing tungsten precursor, which is reduced by the reducing agent layer to form a layer of elemental tungsten. The conformal reducing agent layer is converted to a conformal tungsten layer.

公开(公告)号：US12014928B2

公开(公告)日：2024-06-18

申请号：US17250503

申请日：2019-07-31

Applicant: Lam Research Corporation

Inventor： Xiaolan Ba ,  Ruopeng Deng ,  Juwen Gao ,  Sanjay Gopinath ,  Lawrence Schloss

IPC: H01L21/285 ,  C23C10/04 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  H01L21/768 ,  H01L23/532 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/28568 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/76805 ,  H01L21/76895 ,  H01L23/53209 ,  H01L23/53242 ,  H01L23/53257 ,  H10B41/27 ,  H10B43/27

Abstract: Described herein are methods and apparatuses for filling semiconductor substrate structures with conductive material. The methods involve depositing multi-layer bulk metal films in structures with one or more deposition conditions changed when transitioning from layer-to-layer. The methods result in high fill quality, high throughput, low precursor consumption, and low roughness. Multi-station chambers to perform the methods are also provided.

公开(公告)号：US20240266177A1

公开(公告)日：2024-08-08

申请号：US18612005

申请日：2024-03-21

Applicant: Lam Research Corporation

Inventor： Ruopeng Deng ,  Xiaolan Ba ,  Tianhua Yu ,  Yu Pan ,  Juwen Gao

IPC: H01L21/285 ,  H01L21/768 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/28562 ,  H01L21/28568 ,  H01L21/76876 ,  H01L21/76877 ,  H10B41/27 ,  H10B43/27

Abstract: Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.

公开(公告)号：US20220186370A1

公开(公告)日：2022-06-16

申请号：US17594366

申请日：2020-04-15

Applicant: Lam Research Corporation

Inventor： Pragna Nannapaneni ,  Sema Ermez ,  Novy Tjokro ,  Ruopeng Deng ,  Tianhua Yu ,  Xiaolan Ba ,  Juwen Gao ,  Sanjay Gopinath

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  C23C16/08

Abstract: Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.

公开(公告)号：US12060639B2

公开(公告)日：2024-08-13

申请号：US17594366

申请日：2020-04-15

Applicant: Lam Research Corporation

Inventor： Pragna Nannapaneni ,  Sema Ermez ,  Novy Tjokro ,  Ruopeng Deng ,  Tianhua Yu ,  Xiaolan Ba ,  Juwen Gao ,  Sanjay Gopinath

IPC: C23C16/455 ,  C23C16/08 ,  H01L21/285 ,  H01L21/768 ,  H10B12/00 ,  H10B41/27 ,  H10B43/27

CPC classification number: C23C16/45527 ,  C23C16/08 ,  H01L21/28568 ,  H01L21/768 ,  H10B12/00 ,  H10B41/27 ,  H10B43/27

Abstract: Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.

公开(公告)号：US20210313183A1

公开(公告)日：2021-10-07

申请号：US17250503

申请日：2019-07-31

Applicant: Lam Research Corporation

Inventor： Xiaolan Ba ,  Ruopeng Deng ,  Juwen Gao ,  Sanjay Gopinath ,  Lawrence Schloss

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/455 ,  C23C16/14 ,  C23C16/04

Abstract: Described herein are methods and apparatuses for filling semiconductor substrate structures with conductive material. The methods involve depositing multi-layer bulk metal films in structures with one or more deposition conditions changed when transitioning from layer-to-layer. The methods result in high fill quality, high throughput, low precursor consumption, and low roughness. Multi-station chambers to perform the methods are also provided.

公开(公告)号：US12077858B2

公开(公告)日：2024-09-03

申请号：US17633562

申请日：2020-08-10

Applicant: Lam Research Corporation

Inventor： Pragna Nannapaneni ,  Novy Tjokro ,  Sema Ermez ,  Ruopeng Deng ,  Tianhua Yu ,  Xiaolan Ba ,  Sanjay Gopinath

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/4402 ,  C23C16/52

Abstract: Described herein are methods of filling features with tungsten and related apparatus. The methods described herein involve deposition of a tungsten nucleation layer prior to deposition of a bulk layer. The methods involve multiple atomic layer deposition (ALD) cycles. According to various embodiments, both a boron-containing reducing agent and silicon-reducing agent may be pulses during a single cycle to react with a tungsten-containing precursor and form a tungsten film.

公开(公告)号：US11972952B2

公开(公告)日：2024-04-30

申请号：US17312594

申请日：2019-12-13

Applicant: Lam Research Corporation

Inventor： Ruopeng Deng ,  Xiaolan Ba ,  Tianhua Yu ,  Yu Pan ,  Juwen Gao

IPC: H01L21/76 ,  H01L21/285 ,  H01L21/768 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/28562 ,  H01L21/28568 ,  H01L21/76876 ,  H01L21/76877 ,  H10B41/27 ,  H10B43/27

Abstract: Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.