公开(公告)号：US20210384028A1

公开(公告)日：2021-12-09

申请号：US17285814

申请日：2019-10-11

Applicant: Lam Research Corporation

Inventor： James S. SIMS ,  Shane TANG ,  Vikrant RAI ,  Andrew MCKERROW ,  Huatan QIU

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.