公开(公告)号：US20250060674A1

公开(公告)日：2025-02-20

申请号：US18850628

申请日：2024-07-26

Applicant: Lam Research Corporation

Inventor： Da LI ,  Ji Yeon KIM ,  Younghee LEE ,  Hongxiang ZHAO ,  Yisi ZHU ,  Samantha S.H. TAN ,  Mengnan ZOU ,  Zhiwei SUN ,  Jun XUE

IPC: G03F7/36

Abstract: Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber, eliminating the necessity for a post-dry development bake step in a separate chamber during semiconductor manufacturing. Thermal dry development and plasma dry development may be performed in the same chamber. Thermal dry development, plasma dry development and passivation such as an O2 flash treatment; or thermal dry development, plasma dry development, passivation and hardening operations are enabled without wafer transfer.