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公开(公告)号：US20250093781A1
公开(公告)日：2025-03-20
申请号：US18580334
申请日：2022-07-20
Applicant: Lam Research Corporation
Inventor： Daniel PETER , Meng XUE , Da LI , Jengyi YU , Samantha SiamHwa TAN , Wook CHOI
IPC: G03F7/42 , H01L21/311
Abstract: Photoresist rework of metal-containing photoresist is disclosed. Rework can be accomplished using a thermal process by exposing a substrate to an elevated temperature and an etch gas. Rework can be also accomplished using a wet process by exposing the substrate to an inorganic acidic solution. Residue or other contaminants may be cleaned up from the substrate after rework by exposure to high temperatures, plasma, or wet clean.
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公开(公告)号：US20250060674A1
公开(公告)日：2025-02-20
申请号：US18850628
申请日：2024-07-26
Applicant: Lam Research Corporation
Inventor： Da LI , Ji Yeon KIM , Younghee LEE , Hongxiang ZHAO , Yisi ZHU , Samantha S.H. TAN , Mengnan ZOU , Zhiwei SUN , Jun XUE
IPC: G03F7/36
Abstract: Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber, eliminating the necessity for a post-dry development bake step in a separate chamber during semiconductor manufacturing. Thermal dry development and plasma dry development may be performed in the same chamber. Thermal dry development, plasma dry development and passivation such as an O2 flash treatment; or thermal dry development, plasma dry development, passivation and hardening operations are enabled without wafer transfer.
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Patent Agency Ranking
公开(公告)号：US20240361696A1
公开(公告)日：2024-10-31
申请号：US18769048
申请日：2024-07-10
Applicant: Lam Research Corporation
Inventor： Samantha SiamHwa TAN , Jengyi YU , Da LI , Yiwen FAN , Yang PAN , Jeffrey MARKS , Richard A. GOTTSCHO , Daniel PETER , Timothy William WEIDMAN , Boris VOLOSSKIY , Wenbing YANG
CPC classification number: G03F7/167 , G03F7/0042 , G03F7/0043 , G03F7/168 , G03F7/36 , G03F7/40
Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.
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4.发明公开公开(公告)号：US20240329539A1
公开(公告)日：2024-10-03
申请号：US18579777
申请日：2022-07-15
Applicant: Lam Research Corporation
Inventor： Samantha SiamHwa TAN , Da LI , Jengyi YU , Ji Yeon KIM , Yang PAN
CPC classification number: G03F7/38 , G03F7/0043 , G03F7/36
Abstract: Various embodiments described herein relate to methods, apparatus, and systems for treating metal-containing photoresist to modify material properties of the photoresist. The metal-containing photoresist may be treated in a post-exposure bake process involving at least two thermal operations. At least one of the post-exposure bake operations includes exposing the metal-containing photoresist to a moderately elevated temperature in an oxygen-rich atmosphere. This is followed by a post-exposure bake operation that includes exposing the metal-containing photoresist to a highly elevated temperature in an inert gas atmosphere. The multi-step post-exposure bake operations improves etch electivity in a subsequent dry development process.
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公开(公告)号：US20230314954A1
公开(公告)日：2023-10-05
申请号：US18011707
申请日：2021-06-17
Applicant: Lam Research Corporation
Inventor： Daniel PETER , Jengyi YU , Samantha Siamhwa TAN , Meng XUE , Da LI , Keith Edward DAWSON , Clint Edward THOMAS , John Danny Baterina PACHO
Abstract: Dry backside and bevel edge clean is performed without exposure to plasma to remove unwanted photoresist material from a substrate. The substrate is supported on a substrate support and elevated by minimum contact area (MCA) supports so that etch gas can access a backside of the substrate. A gas distributor delivers curtain gas to a frontside of the substrate to protect photoresist material on the frontside. An etch gas delivery source delivers a first etch gas flow to the backside, and one or more peripheral gas inlets deliver a second etch gas flow to a periphery of the frontside and around the bevel edge. A radiative heat source is positioned below the substrate to heat the substrate.
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公开(公告)号：US20240419078A1
公开(公告)日：2024-12-19
申请号：US18769038
申请日：2024-07-10
Applicant: Lam Research Corporation
Inventor： Samantha SiamHwa TAN , Jengyi YU , Da LI , Yiwen FAN , Yang PAN , Jeffrey MARKS , Richard A. GOTTSCHO , Daniel PETER , Timothy William WEIDMAN , Boris VOLOSSKIY , Wenbing YANG
Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.
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公开(公告)号：US20220122848A1
公开(公告)日：2022-04-21
申请号：US17428560
申请日：2020-02-11
Applicant: Lam Research Corporation
Inventor： Daniel PETER , Da LI , Jengyi YU , Alexander KABANSKY , Katie NARDI , Samantha SiamHwa TAN , Younghee LEE
IPC: H01L21/311
Abstract: A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the silicon oxide region with respect to the sacrificial mask on the lower oxygen silicon containing region.
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