公开(公告)号：US20070163485A1

公开(公告)日：2007-07-19

申请号：US11655509

申请日：2007-01-18

申请人： Laszlo Fabry ,  Gunter Strebel ,  Hans Oelkrug

发明人： Laszlo Fabry ,  Gunter Strebel ,  Hans Oelkrug

IPC分类号： C30B15/00 ,  C30B11/00 ,  C30B21/06

CPC分类号： C30B35/00 ,  C30B15/00 ,  Y10T117/10 ,  Y10T117/1064

摘要： The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom. The single crystal and the semiconductor wafer are distinguished by an edge region, which extends from the circumference to a distance of up to R-5 mm radially into the single crystal or the semiconductor wafer and has an iron concentration, wherein the iron concentration in the edge region is less than 1*109 atoms/cm3.

摘要翻译： 本公开涉及一种用于制造半导体材料的单晶的装置和方法。 该装置包括一个室和一个坩埚，该坩埚被布置在室中并由坩埚加热器封闭，用于屏蔽增长的单晶的辐射屏蔽以及坩埚加热器和室的内壁之间的绝热。 该装置可以包括密封内壁和隔热层之间的间隙的弹性密封件，并且形成用于将气态铁羰基转移到单晶的障碍物。 本公开还涉及通过使用该装置制造半导体材料的单晶的方法，所制造的单晶和从其切下的半导体晶片。 单晶和半导体晶片的区别在于边缘区域，其从圆周延伸到直径为R-5mm的距离，直到单晶或半导体晶片，并具有铁浓度，其中铁浓度 边缘区域小于1×10 9原子/ cm 3。

公开(公告)号：US20090031945A1

公开(公告)日：2009-02-05

申请号：US12175376

申请日：2008-07-17

申请人： Laszlo Fabry ,  Gunter Strebel ,  Hans Oelkrug

发明人： Laszlo Fabry ,  Gunter Strebel ,  Hans Oelkrug

IPC分类号： C30B15/10

CPC分类号： C30B35/00 ,  C30B15/00 ,  Y10T117/10 ,  Y10T117/1064

摘要： The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom. The single crystal and the semiconductor wafer are distinguished by an edge region, which extends from the circumference to a distance of up to R-5 mm radially into the single crystal or the semiconductor wafer and has an iron concentration, wherein the iron concentration in the edge region is less than 1*109 atoms/cm3.

摘要翻译： 本公开涉及一种用于制造半导体材料的单晶的装置和方法。 该装置包括一个室和一个坩埚，该坩埚被布置在室中并由坩埚加热器封闭，用于屏蔽增长的单晶的辐射屏蔽以及坩埚加热器和室的内壁之间的绝热。 该装置可以包括密封内壁和隔热层之间的间隙的弹性密封件，并且形成用于将气态铁羰基转移到单晶的障碍物。 本公开还涉及通过使用该装置制造半导体材料的单晶的方法，所制造的单晶和从其切下的半导体晶片。 单晶和半导体晶片的区别在于边缘区域，其从圆周延伸到直径为R-5mm的距离，直到单晶或半导体晶片，并具有铁浓度，其中铁浓度 边缘区域小于1×10 9原子/ cm 3。