公开(公告)号：US4054532A

公开(公告)日：1977-10-18

申请号：US651851

申请日：1976-01-23

申请人： Leopold Hanke ,  Guenther Hoffmann ,  Helmut Schmelz

发明人： Leopold Hanke ,  Guenther Hoffmann ,  Helmut Schmelz

IPC分类号： C04B35/46 ,  C04B35/462 ,  H01B3/12 ,  H01G4/12 ,  C04B35/50 ,  H01B3/10

CPC分类号： C04B35/462 ,  H01B3/12 ,  H01G4/12

摘要： A ceramic compound having the formula (La.sub.x A.sup.+2.sub.1-x).sub.2 (Ti.sub.x B.sup.+5.sub.1-x).sub.2 O.sub.7 wherein A.sup.+2 is a positive divalent element selected from the group consisting of Ba, Ca, Cd, Mg, Sr and mixtures thereof and B.sup.+5 is a positive pentavalent element selected from the group consisting of Sb, Mo, Nb, Ta, W and mixtures thereof and x is a numeral ranging from 0.70 to 0.99. This compound is characterized by a relatively small temperature coefficient of permittivity, a relatively high insulation resistance, a relatively low loss factor and is compatible with relatively low cost noble metals, making it useful for forming dielectric elements in monolithic multi-layer capacitor elements.

摘要翻译： 具有式（LaxA + 21-x）2（TixB + 51-x）2 O7的陶瓷化合物，其中A + 2是选自Ba，Ca，Cd，Mg，Sr及其混合物的正二价元素 B + 5为选自Sb，Mo，Nb，Ta，W及其混合物的正五价元素，x为0.70〜0.99的数值。 该化合物的特征在于介电常数的温度系数相对较小，绝缘电阻相对较高，损耗系数相对较低，并且与相对低成本的贵金属相容，因此可用于在单片多层电容器元件中形成介电元件。

公开(公告)号：US4425556A

公开(公告)日：1984-01-10

申请号：US259908

申请日：1981-05-04

申请人： Leopold Hanke ,  Helmut Schmelz

发明人： Leopold Hanke ,  Helmut Schmelz

IPC分类号： C04B35/46 ,  C04B35/468 ,  H01B1/08 ,  H01C7/02

CPC分类号： H01C7/025 ,  C04B35/4682 ,  H01B1/08

摘要： Ceramic cold conductors based on barium titanates having the general formula:(Ba.sub.1-x M.sup.II)O.z(Ti.sub.1-y M.sup.IV y)O.sub.2wherein M.sup.II is selected from the group consisting of Ca, Mg, Sr and Pb; M.sup.IV is selected from the group consisting of Sn and Zr; x and y are numerals, the sum of which does not exceed one and z is a numeral in the range of 1.005 to 1.05, and containing one or more different doping elements, one of which (antimony, bismuth, niobium, lanthanum, yttrium or rare earth metals) in the barium titanate crystal lattice exhibits a predominant donor property and another of which (chromium, cobalt, copper, iron, manganese, nickel or vanadium) exhibits a predominant acceptor property, are produced by converting a mixture of appropriate starting materials into a conversion product, reducing the particle size of such conversion product, forming a body from such particles, sintering such body and subjecting the sintered body to a cooling and holding phase in special atmospheres to attain a final product. The doping element exhibiting donor property is present at a total concentration of 0.35 to 5 atomic percent in a Perowskite lattice and a doping element exhibiting acceptor properties is present at a total concentration of 0 to 2 atomic percent, with the proviso that the concentration of the doping elements is such that n-conductivity is present in the final product with a specific cold resistance, .rho..sub.25.degree. C., of less than 10 ohm . cm.

摘要翻译： 基于具有通式（Ba1-xMII）O.z（Ti1-yMIVy）O2的钛酸钡的陶瓷冷导体，其中MII选自Ca，Mg，Sr和Pb; MIV选自Sn和Zr; x和y是数字，其总和不超过1，z是1.005至1.05范围内的数字，并且含有一种或多种不同的掺杂元素，其中之一（锑，铋，铌，镧，钇或钇 钛酸钡晶格中的稀土金属表现出主要的供体特性，另一种（铬，钴，铜，铁，锰，镍或钒）表现出主要的受主性质，是通过将合适的起始原料 转化产物，降低这种转化产物的粒度，从这样的颗粒中形成一个体，烧结这样的体，并使烧结体在特殊气氛下进行冷却和保持阶段以获得最终产品。 表现出供体特性的掺杂元素在一个Perowskite晶格中的总浓度为0.35-5原子百分数，而呈现受体特性的掺杂元素的总浓度为0-2原子百分比，条件是 掺杂元素使得最终产品中存在n导电性，具有小于10欧姆的特定耐寒性，rho 25℃。 厘米。

公开(公告)号：US4407858A

公开(公告)日：1983-10-04

申请号：US335587

申请日：1981-12-29

申请人： Leopold Hanke ,  Hans Hellebrand ,  Helmut Schmelz

发明人： Leopold Hanke ,  Hans Hellebrand ,  Helmut Schmelz

IPC分类号： C01B33/02 ,  C30B1/02 ,  H01L31/04 ,  H01L31/18

CPC分类号： C01B33/02 ,  C30B1/02 ,  C30B29/06

摘要： A low porosity sintered polycrystalline silicon film is produced by grinding initial silicon material in a non-oxygen-containing liquid, such as decahydronaphthalene, to an average grain size corresponding to a specific surface of at least 50 m.sup.2 /g; thickening the so-attained grinding mass with a non-oxygen-containing material, such as polyisobutylene and/or polyethylene in a suitable solvent, so as to attain a viscosity in the resultant slip suitable for drawing a film from such slip, and drawing a film from such slip, optionally dividing the film into desired sized pieces, and sintering the resultant film or pieces.

摘要翻译： 通过将非含氧液体如十氢萘中的初始硅材料研磨至对应于至少50m 2 / g的比表面的平均晶粒尺寸来制造低孔隙率烧结多晶硅膜; 在合适的溶剂中，用诸如聚异丁烯和/或聚乙烯之类的非含氧材料增稠所得到的研磨物质，从而获得适于从这种滑动中拉伸薄膜的所得滑动物的粘度， 膜，可任选地将膜分成所需尺寸的片，并烧结所得到的片或片。

公开(公告)号：US4361529A

公开(公告)日：1982-11-30

申请号：US254406

申请日：1981-04-15

申请人： Leopold Hanke ,  Helmut Schmelz

发明人： Leopold Hanke ,  Helmut Schmelz

IPC分类号： C30B1/02 ,  C30B29/06 ,  C30B29/64 ,  C04B35/14

CPC分类号： C30B1/02

摘要： The invention provides an improved method for producing plate-shaped or tape-shaped silicon crystal bodies having pillar-like structures therein which are equivalent to columnar structures comprising conducting the sintering process, for purposes of particle enlargement, in a gas atmosphere comprised of argon and a minimum amount of hydrogen. In a preferred embodiment, the hydrogen concentration in such atmosphere is about 6% by volume. The so-produced silicon bodies are useful for further processing into large-surface solar cells.

摘要翻译： 本发明提供了一种制造板状或带状硅晶体的改进方法，其中具有柱状结构，其相当于柱状结构，包括进行烧结过程，用于粒子扩大，在由氩气和 最小量的氢。 在优选的实施方案中，这种气氛中的氢浓度为约6体积％。 如此生产的硅体可用于进一步加工成大面积太阳能电池。