公开(公告)号：US20140061700A1

公开(公告)日：2014-03-06

申请号：US13965277

申请日：2013-08-13

Applicant: Lextar Electronics Corporation

Inventor： Chia-En Lee ,  Yan-Hao Chen

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L33/382 ,  H01L2224/16

Abstract: A flip-chip light-emitting diode structure comprises a carrier substrate, a light-emitting die structure, a reflective layer, an aperture, a dielectric layer, a first contact layer and a second contact layer. The light-emitting die structure, located on the carrier substrate, comprises a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The light emitting layer is formed between the first type and the second type semiconductor layer. The reflective layer is located on the first type semiconductor layer. The aperture penetrates the light-emitting die structure. The dielectric layer covers an inner sidewall of the aperture and extends to a portion of a surface of the reflective layer. The first contact layer is disposed on the part of the reflective layer not covered by the dielectric layer. The second contact layer fills up the aperture and is electrically connected to the second type semiconductor layer.

Abstract translation: 倒装芯片发光二极管结构包括载体衬底，发光管芯结构，反射层，孔，电介质层，第一接触层和第二接触层。 位于载体基板上的发光管芯结构包括第一类型半导体层，第二类型半导体层和发光层。 发光层形成在第一类型和第二类型半导体层之间。 反射层位于第一类型半导体层上。 孔径穿透发光模具结构。 介电层覆盖孔的内侧壁并延伸到反射层表面的一部分。 第一接触层设置在未被电介质层覆盖的反射层的部分上。 第二接触层填充孔并电连接到第二类型半导体层。

公开(公告)号：US08859311B2

公开(公告)日：2014-10-14

申请号：US13965277

申请日：2013-08-13

Applicant: Lextar Electronics Corporation

Inventor： Chia-En Lee ,  Yan-Hao Chen

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L33/382 ,  H01L2224/16

Abstract: A flip-chip light-emitting diode structure comprises a carrier substrate, a light-emitting die structure, a reflective layer, an aperture, a dielectric layer, a first contact layer and a second contact layer. The light-emitting die structure, located on the carrier substrate, comprises a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The light emitting layer is formed between the first type and the second type semiconductor layer. The reflective layer is located on the first type semiconductor layer. The aperture penetrates the light-emitting die structure. The dielectric layer covers an inner sidewall of the aperture and extends to a portion of a surface of the reflective layer. The first contact layer is disposed on the part of the reflective layer not covered by the dielectric layer. The second contact layer fills up the aperture and is electrically connected to the second type semiconductor layer.

Abstract translation: 倒装芯片发光二极管结构包括载体衬底，发光管芯结构，反射层，孔，电介质层，第一接触层和第二接触层。 位于载体基板上的发光管芯结构包括第一类型半导体层，第二类型半导体层和发光层。 发光层形成在第一类型和第二类型半导体层之间。 反射层位于第一类型半导体层上。 孔径穿透发光模具结构。 介电层覆盖孔的内侧壁并延伸到反射层表面的一部分。 第一接触层设置在未被电介质层覆盖的反射层的部分上。 第二接触层填充孔并电连接到第二类型半导体层。