公开(公告)号：US08912112B2

公开(公告)日：2014-12-16

申请号：US13244290

申请日：2011-09-24

申请人： Li-Duan Tsai ,  Sung-Chun Chang ,  Hui-Wen Tsai ,  Chi-Yun Kang ,  Jiunn-Nan Lin

发明人： Li-Duan Tsai ,  Sung-Chun Chang ,  Hui-Wen Tsai ,  Chi-Yun Kang ,  Jiunn-Nan Lin

IPC分类号： H01M4/02 ,  B01J31/00 ,  H01M4/86 ,  H01M4/92 ,  H01M8/10

CPC分类号： H01M4/8652 ,  H01M4/92 ,  H01M4/926 ,  H01M8/1011 ,  Y02E60/50 ,  Y02E60/523

摘要： The present invention relates to a metal catalyst composition modified by a nitrogen-containing compound, which effectively reduces cathode catalyst poisoning. The catalyst composition applied on the anode also lowers the over-potential. The catalyst coupled with the nitrogen-containing compound has increased three-dimensional hindrance, which improves the distribution of the catalyst particles and improves the reaction activity.

摘要翻译： 本发明涉及通过含氮化合物改性的金属催化剂组合物，其有效地减少阴极催化剂中毒。 施加在阳极上的催化剂组合也降低了过电位。 与含氮化合物偶联的催化剂增加了三维阻碍，改善了催化剂颗粒的分布，提高了反应活性。

公开(公告)号：US20120171593A1

公开(公告)日：2012-07-05

申请号：US13244290

申请日：2011-09-24

申请人： Li-Duan Tsai ,  Sung-Chun Chang ,  Hui-Wen Tsai ,  Chi-Yun Kang ,  Jiunn-Nan Lin

发明人： Li-Duan Tsai ,  Sung-Chun Chang ,  Hui-Wen Tsai ,  Chi-Yun Kang ,  Jiunn-Nan Lin

IPC分类号： H01M8/10 ,  B01J31/02

CPC分类号： H01M4/8652 ,  H01M4/92 ,  H01M4/926 ,  H01M8/1011 ,  Y02E60/50 ,  Y02E60/523

摘要： The present invention relates to a metal catalyst composition modified by a nitrogen-containing compound, which effectively reduces cathode catalyst poisoning. The catalyst composition applied on the anode also lowers the over-potential. The catalyst coupled with the nitrogen-containing compound has increased three-dimensional hindrance, which improves the distribution of the catalyst particles and improves the reaction activity.

摘要翻译： 本发明涉及通过含氮化合物改性的金属催化剂组合物，其有效地减少阴极催化剂中毒。 施加在阳极上的催化剂组合也降低了过电位。 与含氮化合物偶联的催化剂增加了三维阻碍，改善了催化剂颗粒的分布，提高了反应活性。

公开(公告)号：US20090002028A1

公开(公告)日：2009-01-01

申请号：US11769716

申请日：2007-06-28

申请人： Ming-Dou Ker ,  Hui-Wen Tsai ,  Ryan Hsin-Chin Jiang

发明人： Ming-Dou Ker ,  Hui-Wen Tsai ,  Ryan Hsin-Chin Jiang

IPC分类号： H03K19/0175

CPC分类号： H03K19/00315

摘要： A Mixed-voltage input and output (I/O) buffer including a pre-driver unit, a bulk-voltage generating unit, a first to a third transistors and an input stage unit is provided. The pre-driver unit outputs a first source/drain and a second signal. The bulk-voltage generating unit determines whether a first voltage or a pad voltage is used as a bulk voltage according to the pad voltage level. A gate of the first transistor receives the first signal, and a bulk, a first source/drain and a second source/drain of the first transistor are respectively coupled to the bulk voltage, the first voltage and the pad. A gate of the third transistor receives the second signal, and a first source/drain and a second source/drain of the third transistor are respectively coupled to the input stage unit for receiving an input signal from the pad and a second voltage.

摘要翻译： 提供了包括预驱动器单元，体电压产生单元，第一至第三晶体管和输入级单元的混合电压输入和输出（I / O）缓冲器。 预驱动器单元输出第一源极/漏极和第二信号。 体积电压产生单元根据焊盘电压电平来确定是否使用第一电压或焊盘电压作为体电压。 第一晶体管的栅极接收第一信号，并且第一晶体管的体，第一源极/漏极和第二源极/漏极分别耦合到体电压，第一电压和焊盘。 第三晶体管的栅极接收第二信号，第三晶体管的第一源极/漏极和第二源极/漏极分别耦合到输入级单元，用于从焊盘接收输入信号和第二电压。