TRANSISTOR MODULE AND TRANSISTOR DRIVING MODULE
    1.
    发明申请
    TRANSISTOR MODULE AND TRANSISTOR DRIVING MODULE 有权
    晶体管模块和晶体管驱动模块

    公开(公告)号:US20120038391A1

    公开(公告)日:2012-02-16

    申请号:US13092142

    申请日:2011-04-21

    IPC分类号: H03K3/01

    CPC分类号: H02H7/122

    摘要: The present invention discloses a transistor driving module, coupling to a converting controller, to driving a high side transistor and a low side transistor connected in series, wherein one end of the high side transistor is coupled to an input voltage and one end of the low side transistor is grounded. The transistor driving module comprises a high side driving unit, a low side driving unit, a current limiting unit and an anti-short through unit. The high side driving unit generates a high side driving signal to turn the high side transistor on according to a duty cycle signal, and the low side driving unit generates a low side driving signal turn the low side transistor on according to the high side driving signal. The current limiting unit is coupled to the high side transistor and the high side driving unit, and generates a current limiting signal when a current flowing through the high side transistor higher than a current limiting value. The high side driving unit is stopped to generate the high side driving signal when receiving the current limiting value. The anti-short through unit is coupled to the high side driving unit and the low side driving unit to control the generations of the high side driving signal and the low side driving signal to have the timings of the high side driving signal and the low side driving signal non-overlapped.

    摘要翻译: 本发明公开了一种与转换控制器耦合以驱动串联连接的高侧晶体管和低侧晶体管的晶体管驱动模块,其中高侧晶体管的一端耦合到输入电压,低端的一端 侧晶体管接地。 晶体管驱动模块包括高侧驱动单元,低侧驱动单元,限流单元和防短路单元。 高侧驱动单元产生高侧驱动信号,以根据占空比信号使高侧晶体管导通,低边驱动单元产生低侧驱动信号,根据高侧驱动信号使低侧晶体管导通 。 电流限制单元耦合到高侧晶体管和高侧驱动单元,并且当流过高侧晶体管的电流高于电流限制值时,产生限流信号。 当接收到电流限制值时,高侧驱动单元被停止以产生高侧驱动信号。 防短路单元耦合到高侧驱动单元和低侧驱动单元,以控制高侧驱动信号和低侧驱动信号的代,以具有高侧驱动信号和低侧的定时 驾驶信号不重叠。

    Transistor module and transistor driving module
    2.
    发明授权
    Transistor module and transistor driving module 有权
    晶体管模块和晶体管驱动模块

    公开(公告)号:US08368433B2

    公开(公告)日:2013-02-05

    申请号:US13092142

    申请日:2011-04-21

    IPC分类号: H03K3/01

    CPC分类号: H02H7/122

    摘要: The present invention discloses a transistor driving module, coupling to a converting controller, to driving a high side transistor and a low side transistor connected in series, wherein one end of the high side transistor is coupled to an input voltage and one end of the low side transistor is grounded. The transistor driving module comprises a high side driving unit, a low side driving unit, a current limiting unit and an anti-short through unit. The high side driving unit generates a high side driving signal to turn the high side transistor on according to a duty cycle signal, and the low side driving unit generates a low side driving signal turn the low side transistor on according to the high side driving signal. The current limiting unit is coupled to the high side transistor and the high side driving unit, and generates a current limiting signal when a current flowing through the high side transistor higher than a current limiting value. The high side driving unit is stopped to generate the high side driving signal when receiving the current limiting value. The anti-short through unit is coupled to the high side driving unit and the low side driving unit to control the generations of the high side driving signal and the low side driving signal to have the timings of the high side driving signal and the low side driving signal non-overlapped.

    摘要翻译: 本发明公开了一种与转换控制器耦合以驱动串联连接的高侧晶体管和低侧晶体管的晶体管驱动模块,其中高侧晶体管的一端耦合到输入电压,低端的一端 侧晶体管接地。 晶体管驱动模块包括高侧驱动单元,低侧驱动单元,限流单元和防短路单元。 高侧驱动单元产生高侧驱动信号,以根据占空比信号使高侧晶体管导通,低边驱动单元产生低侧驱动信号,根据高侧驱动信号使低侧晶体管导通 。 电流限制单元耦合到高侧晶体管和高侧驱动单元,并且当流过高侧晶体管的电流高于电流限制值时,产生限流信号。 当接收到电流限制值时,高侧驱动单元被停止以产生高侧驱动信号。 防短路单元耦合到高侧驱动单元和低侧驱动单元,以控制高侧驱动信号和低侧驱动信号的代,以具有高侧驱动信号和低侧的定时 驾驶信号不重叠。

    Transistor switch control circuit
    3.
    发明授权
    Transistor switch control circuit 有权
    晶体管开关控制电路

    公开(公告)号:US08552768B2

    公开(公告)日:2013-10-08

    申请号:US13244636

    申请日:2011-09-25

    IPC分类号: H03B1/00 H03K3/00

    CPC分类号: H02M1/38 H02M3/156

    摘要: A synchronous driving circuit in the arts may cause a short through pheromone when a duty cycle of a duty cycle control signal is too short. The present invention sets a delay time with a suitable period when the duty cycle of the duty cycle control signal is too short to avoid the short through phenomenon.

    摘要翻译: 当占空比控制信号的占空比太短时,本技术中的同步驱动电路可能导致短路信息素。 本发明在占空比控制信号的占空比太短而避免短路现象时,以合适的周期设定延迟时间。

    TRANSISTOR SWITCH CONTROL CIRCUIT
    4.
    发明申请
    TRANSISTOR SWITCH CONTROL CIRCUIT 有权
    晶体管开关控制电路

    公开(公告)号:US20120319754A1

    公开(公告)日:2012-12-20

    申请号:US13244636

    申请日:2011-09-25

    IPC分类号: H03K3/356

    CPC分类号: H02M1/38 H02M3/156

    摘要: A synchronous driving circuit in the arts may cause a short through pheromone when a duty cycle of a duty cycle control signal is too short. The present invention sets a delay time with a suitable period when the duty cycle of the duty cycle control signal is too short to avoid the short through phenomenon.

    摘要翻译: 当占空比控制信号的占空比太短时,本技术中的同步驱动电路可能引起短路信息素。 本发明在占空比控制信号的占空比太短而避免短路现象时,以合适的周期设定延迟时间。