公开(公告)号：US09627569B2

公开(公告)日：2017-04-18

申请号：US14718352

申请日：2015-05-21

Applicant: LightSpin Technologies, Inc.

Inventor： Eric S. Harmon

IPC: H01L27/146 ,  H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/0352 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

公开(公告)号：US20150270430A1

公开(公告)日：2015-09-24

申请号：US14718352

申请日：2015-05-21

Applicant: LightSpin Technologies, Inc.

Inventor： Eric S. Harmon

IPC: H01L31/107 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/0352 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

Abstract translation: 本公开包括用于检测光子的装置，包括雪崩光子检测器，这种检测器的阵列，以及包括这种阵列的电路。 在一些方面，检测器和阵列包括由电离材料包围的虚拟斜边边缘台面结构，该电阻材料被离子注入损坏，并且具有朝向台面结构的顶部向内逐渐向内倾斜或朝向离子注入发生方向的侧壁轮廓。 其它方面涉及掩蔽和多次植入和/或退火步骤。 此外，公开了制造和使用这些器件，电路和阵列的方法。

公开(公告)号：US09076707B2

公开(公告)日：2015-07-07

申请号：US14257179

申请日：2014-04-21

Applicant: LightSpin Technologies, Inc.

Inventor： Eric S. Harmon

IPC: H01L27/146 ,  H01L31/107 ,  H01L27/144

CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/0352 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

Abstract translation: 本公开包括用于检测光子的装置，包括雪崩光子检测器，这种检测器的阵列，以及包括这种阵列的电路。 在一些方面，检测器和阵列包括由电离材料包围的虚拟斜边边缘台面结构，该电阻材料被离子注入损坏，并且具有朝向台面结构的顶部向内逐渐向内倾斜或朝向离子注入发生方向的侧壁轮廓。 其它方面涉及掩蔽和多次植入和/或退火步骤。 此外，公开了制造和使用这些器件，电路和阵列的方法。

公开(公告)号：US20140312448A1

公开(公告)日：2014-10-23

申请号：US14257179

申请日：2014-04-21

Applicant: LightSpin Technologies, Inc.

Inventor： Eric S. Harmon

IPC: H01L27/146 ,  H01L31/107

CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/0352 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

Abstract translation: 本公开包括用于检测光子的装置，包括雪崩光子检测器，这种检测器的阵列，以及包括这种阵列的电路。 在一些方面，检测器和阵列包括由电离材料包围的虚拟斜边边缘台面结构，该电阻材料被离子注入损坏，并且具有朝向台面结构的顶部向内逐渐向内倾斜或朝向离子注入发生方向的侧壁轮廓。 其它方面涉及掩蔽和多次植入和/或退火步骤。 此外，公开了制造和使用这些器件，电路和阵列的方法。