公开(公告)号：US12021164B2

公开(公告)日：2024-06-25

申请号：US17459611

申请日：2021-08-27

Applicant: Utica Leaseco, LLC

Inventor： Octavi Santiago Escala Semonin ,  Reto Adrian Furler ,  Hasti Majidi ,  Kristen Sydney Hessler

IPC: H01L31/0216 ,  H01L31/0304 ,  H01L31/054 ,  H01L31/056 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/18

CPC classification number: H01L31/1844 ,  H01L31/02168 ,  H01L31/03046 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0735

Abstract: A method is described that includes sputtering multiple layers on a back surface of the photovoltaic structure, the photovoltaic structure being made of at least one group III-V semiconductor material, and evaporating, over the multiple layers, one or more additional layers including a metal layer, the back metal structure being formed by the multiple layers and the additional layers. A photovoltaic device is also described that includes a back metal structure disposed over a back surface of a photovoltaic structure made of a group III-V semiconductor material, the back metal structure including one or more evaporated layers disposed over multiple sputtered layers, the one or more evaporated layers including a metal layer. By allowing evaporation along with sputtering, tool size and costs can be reduced, including minimizing a number of vacuum breaks. Moreover, good yield and reliability, such as reducing dark line defects (DLDs), can also be achieved.

公开(公告)号：US20240136459A1

公开(公告)日：2024-04-25

申请号：US18136932

申请日：2023-04-19

Applicant: Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R. O. C.

Inventor： YU-LI TSAI ,  Chih-Hung Wu

IPC: H01L31/0725 ,  H01L31/0735 ,  H01L31/18

CPC classification number: H01L31/0725 ,  H01L31/0735 ,  H01L31/1844

Abstract: A multi junction solar cell structure includes a first sub-cell, a first tunnel diode layer, a second tunnel diode layer, a second sub-cell, a lattice gradient buffer layer and a third sub-cell. The first sub-cell includes a first surface and a second surface opposite to the first surface. The first tunnel diode layer is formed on the first surface of the first sub-cell. The second sub-cell is formed on the first tunnel diode layer. The second tunnel diode layer is formed on the second surface of the first sub-cell. The lattice gradient buffer layer is formed on the second tunnel diode. The third sub-cell is formed on the lattice gradient buffer layer. This disclosure also contains a method for manufacturing the above-mentioned multi-junction solar cell.

公开(公告)号：US11961936B2

公开(公告)日：2024-04-16

申请号：US18205537

申请日：2023-06-03

Applicant: Shimon Maimon

Inventor： Shimon Maimon

IPC: H01L31/18 ,  B82Y20/00 ,  G01J5/06 ,  G01J5/061 ,  G01J5/20 ,  H01L27/146 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/101 ,  G01J5/00 ,  H01L23/38

CPC classification number: H01L31/1832 ,  B82Y20/00 ,  G01J5/061 ,  G01J5/20 ,  H01L27/14669 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1844 ,  G01J2005/0077 ,  H01L23/38 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A photodetector comprising a doped semiconductor photoabsorber, a barrier layer in contact with the photo absorber layer on one side, and at least one doped semiconductor contact area on the opposite side of the barrier layer. The barrier has a valence band energy substantially equal to the valence band energy of the photo absorber, and a thickness and a conductance band gap sufficient to allow tunneling of minority carriers, and block the flow of thermalized majority carriers from the photo absorber to the contact area. A P-doped or N-doped semiconductor may be utilized. The photoabsorber layer may extend past the one or more individual sections of the contact areas in the direction across the photo-detector.

公开(公告)号：US11961931B2

公开(公告)日：2024-04-16

申请号：US17820509

申请日：2022-08-17

Applicant: SOLAERO TECHNOLOGIES CORP.

Inventor： Arthur B. Cornfeld ,  Jeff Steinfeldt

IPC: H01L31/0725 ,  H01L31/0304 ,  H01L31/048 ,  H01L31/0687 ,  H01L31/18

CPC classification number: H01L31/0725 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/048 ,  H01L31/06875 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1856 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/50

Abstract: A method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.

公开(公告)号：US20240113247A1

公开(公告)日：2024-04-04

申请号：US18331173

申请日：2023-06-08

Applicant: Asahi Kasei Microdevices Corporation

Inventor： Osamu MOROHARA ,  Yoshiki SAKURAI ,  Hiromi FUJITA ,  Hirotaka GEKA

IPC: H01L31/109 ,  G01J5/08 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/109 ,  G01J5/0853 ,  H01L31/035236 ,  H01L31/1844

Abstract: An infrared detecting device is provided. The infrared detecting device includes: a semiconductor substrate; a first layer having a first conductivity type on the semiconductor substrate; a light receiving layer on the first layer; and a second layer having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure. The second layer contains AlzIn1-zSb (0.05

公开(公告)号：US11929442B2

公开(公告)日：2024-03-12

申请号：US16792551

申请日：2020-02-17

Applicant: Newport Fab, LLC

Inventor： Edward Preisler

IPC: H01L31/0304 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/18 ,  G01R1/073

CPC classification number: H01L31/02325 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/1844 ,  H01L31/186 ,  G01R1/07342

Abstract: A semiconductor structure includes a group IV substrate including group IV dies separated by a scribe line. A group IIIV-chiplet is situated over the group IV substrate at least partially over the scribe line. A group III-V process control monitoring device in the group III-V chiplet is situated over the scribe line. Functional group III-V optoelectronic devices can be situated over the group IV dies.

公开(公告)号：US11901476B2

公开(公告)日：2024-02-13

申请号：US17170133

申请日：2021-02-08

Applicant: MICROLINK DEVICES, INC.

Inventor： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum ,  Genevieve Martin

IPC: H01L31/18 ,  H01L31/0687

CPC classification number: H01L31/1852 ,  H01L31/06875 ,  H01L31/1844 ,  H01L31/1896

Abstract: The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

公开(公告)号：US11830955B2

公开(公告)日：2023-11-28

申请号：US18086066

申请日：2022-12-21

Applicant: RICHHEALTH TECHNOLOGY CORPORATION

Inventor： Juang-Tang Huang

IPC: H01L31/0352 ,  A61B5/15 ,  A61B5/00 ,  A61B5/05 ,  H01L21/02 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/18 ,  A61B5/145

CPC classification number: H01L31/035236 ,  A61B5/05 ,  A61B5/150022 ,  A61B5/150282 ,  A61B5/150969 ,  A61B5/150984 ,  A61B5/685 ,  A61B5/6849 ,  H01L21/0262 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/1844 ,  A61B5/14514 ,  A61B5/14532 ,  A61B5/14546 ,  A61B5/6833 ,  A61B2562/046 ,  A61B2562/125 ,  Y02E10/544 ,  Y02P70/50

Abstract: Transdermal microneedles continuous monitoring system is provided. The continuous system monitoring includes a substrate, a microneedle unit, a signal processing unit and a power supply unit. The microneedle unit at least comprises a first microneedle set used as a working electrode and a second microneedle set used as a reference electrode, the first and second microneedle sets arranging on the substrate. Each microneedle set comprises at least a microneedle. The first microneedle set comprises at least a sheet having a through hole on which a barbule forms at the edge. One of the sheets provides the through hole from which the barbules at the edge of the other sheets go through, and the barbules are disposed separately.

公开(公告)号：US20230369527A1

公开(公告)日：2023-11-16

申请号：US18031909

申请日：2021-10-14

Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： Patrick Runge ,  Tobias Beckerwerth

IPC: H01L31/105 ,  H01L31/0304 ,  H01L31/18

CPC classification number: H01L31/105 ,  H01L31/03046 ,  H01L31/1844

Abstract: Provided is a photodiode, including a substrate formed by a III-V semiconductor material. The substrate is made of InP; at least one light absorption layer; and at least one doped contact layer. The absorption layer is to be illuminated through the contact layer. The contact layer includes a semiconductor material having an indirect band gap and has a thickness of at least 200 nm.

公开(公告)号：US11817524B1

公开(公告)日：2023-11-14

申请号：US17526623

申请日：2021-11-15

Applicant: Magnolia Optical Technologies, Inc.

Inventor： Roger E. Welser ,  Ashok K. Sood

IPC: H01L31/00 ,  H01L31/18 ,  H01L31/0216 ,  G02B1/115 ,  H01L31/054 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/0725 ,  H01L31/0445 ,  H01L31/056 ,  H01L31/0203 ,  H01L31/0224 ,  H01L31/0735 ,  H01L31/048 ,  H01L31/0304 ,  H01L31/065

CPC classification number: H01L31/1884 ,  G02B1/115 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/02165 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022475 ,  H01L31/035236 ,  H01L31/035263 ,  H01L31/048 ,  H01L31/0445 ,  H01L31/0481 ,  H01L31/056 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/186 ,  H01L31/1844 ,  H01L31/03046 ,  H01L31/065 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

Abstract: Refractive optical element designs are provided for high geometric optical efficiency over a wide range of incident angles. To minimize Fresnel reflection losses, the refractive optical element designs employ multiple encapsulant materials, differing in refractive index. Concentrator photovoltaic subassemblies are formed by embedding a high efficiency photovoltaic device within the refractive optical element, along with appropriate electrical contacts and heat sinks. Increased solar electric power output is obtained by employing a single-junction III-V material structure with light-trapping structures.