公开(公告)号：US06326261B1

公开(公告)日：2001-12-04

申请号：US09754345

申请日：2001-01-05

申请人： Ling-Hsu Tsang ,  De-Yuan Wu

发明人： Ling-Hsu Tsang ,  De-Yuan Wu

IPC分类号： H01L218242

CPC分类号： H01L27/10867

摘要： A method of fabricating a deep trench capacitor is achieved. A deep trench is formed in a silicon substrate followed by the formation of a buried plate in the silicon substrate beneath the deep trench. A silicon nitride layer is formed on the surface of the deep trench above the buried plate. An oxidation process is performed to simultaneously form a first oxide film on the silicon nitride layer and a second oxide film on the silicon substrate within the deep trench. A doped polysilicon layer is formed in the deep trench with its surface lowered down to the surface of the substrate. Finally, a portion of the second oxide film is removed to expose the substrate in the upper region of the deep trench followed by the filling in of an undoped polysilicon layer into the deep trench to finish the fabrication process of the DRAM deep trench capacitor.

摘要翻译： 实现了制造深沟槽电容器的方法。 在硅衬底中形成深沟槽，随后在深沟槽下方的硅衬底中形成掩埋板。 在掩埋板上方的深沟槽的表面上形成氮化硅层。 进行氧化处理以在氮化硅层上同时形成第一氧化物膜，并在深沟槽内在硅衬底上形成第二氧化物膜。 在深沟槽中形成掺杂多晶硅层，其表面向下降到衬底的表面。 最后，去除第二氧化膜的一部分以暴露深沟槽的上部区域中的衬底，然后将未掺杂的多晶硅层填充到深沟槽中，以完成DRAM深沟槽电容器的制造过程。