公开(公告)号：US5273849A

公开(公告)日：1993-12-28

申请号：US850226

申请日：1992-03-12

申请人： Lloyd R. Harriott ,  Michael J. R. Vasile

发明人： Lloyd R. Harriott ,  Michael J. R. Vasile

IPC分类号： G03F1/74 ,  G03F9/00

CPC分类号： G03F1/74

摘要： Repair of transparent errors in masks utilized for lithographic processes in the manufacture of devices is accomplished by a particularly expedient procedure. In this procedure a metal ion beam such as a gallium ion beam is directed to the region that is to be repaired. An organic gas, including a material having an aromatic ring with an unsaturated substituent, is introduced into this region. The interaction of the gas with the ion beam produces an opaque adherent deposit. The resolution for this deposition is extremely good and is suitable for extremely fine design rules, e.g., 1 .mu.m and below.

摘要翻译： 在制造装置中用于光刻工艺的掩模中的透明错误的修复通过特别方便的程序来实现。 在该过程中，诸如镓离子束的金属离子束被引导到要修复的区域。 将包含具有不饱和取代基的芳环的材料的有机气体引入该区域。 气体与离子束的相互作用产生不透明的粘附沉积物。 该沉积的分辨率非常好，适用于非常精细的设计规则，例如1米及以下。