公开(公告)号：US10528292B2

公开(公告)日：2020-01-07

申请号：US15986804

申请日：2018-05-22

申请人： Luca De Santis ,  Tommaso Vali ,  Luca Nubile ,  Ricardo Cardinali ,  Maria L. Gallese ,  Cristina Lattaro

发明人： Luca De Santis ,  Tommaso Vali ,  Luca Nubile ,  Ricardo Cardinali ,  Maria L. Gallese ,  Cristina Lattaro

IPC分类号： G11C16/04 ,  G06F3/06 ,  G06F1/26

摘要： Embodiments of the present disclosure may relate to a memory controller that may include a main controller to begin a power down of a non-volatile memory storage during a first time period, while operating in a first voltage range, wherein the main controller is to begin the power down of the non-volatile memory in response to an indication of a voltage level being below a predetermined threshold; and a sequencer to continue the power down of the memory storage during a second time period, while operating within a second voltage range lower than the first voltage range. In some embodiments, the sequencer may include a state machine to perform a discharge sequence, where the state machine includes a micro-action output to output a micro-action command to the memory storage based at least in part on a current state of the state machine. Other embodiments may be described and/or claimed.

公开(公告)号：US20190042156A1

公开(公告)日：2019-02-07

申请号：US15986804

申请日：2018-05-22

申请人： Luca De Santis ,  Tommaso Vali ,  Luca Nubile ,  Ricardo Cardinali ,  Maria L. Gallese ,  Cristina Lattaro

发明人： Luca De Santis ,  Tommaso Vali ,  Luca Nubile ,  Ricardo Cardinali ,  Maria L. Gallese ,  Cristina Lattaro

IPC分类号： G06F3/06

摘要： Embodiments of the present disclosure may relate to a memory controller that may include a main controller to begin a power down of a non-volatile memory storage during a first time period, while operating in a first voltage range, wherein the main controller is to begin the power down of the non-volatile memory in response to an indication of a voltage level being below a predetermined threshold; and a sequencer to continue the power down of the memory storage during a second time period, while operating within a second voltage range lower than the first voltage range. In some embodiments, the sequencer may include a state machine to perform a discharge sequence, where the state machine includes a micro-action output to output a micro-action command to the memory storage based at least in part on a current state of the state machine. Other embodiments may be described and/or claimed.