SEMICONDUCTOR LIGHT-RECEIVING ELEMENT

    公开(公告)号:US20220238745A1

    公开(公告)日:2022-07-28

    申请号:US17362316

    申请日:2021-06-29

    IPC分类号: H01L31/11 H01L31/103

    摘要: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more. At least one of the low-concentration layers includes an absorption layer with a band gap that absorbs incident light.

    WAVELENGTH MULTIPLEXING OPTICAL TRANSMISSION SYSTEM AND WAVELENGTH MULTIPLEXING OPTICAL TRANSMITTER

    公开(公告)号:US20240113797A1

    公开(公告)日:2024-04-04

    申请号:US18315348

    申请日:2023-05-10

    IPC分类号: H04J14/02 H04B10/61

    摘要: A plurality of optical signals are arranged on optical frequency grids having a frequency spacing of Δf, a wavelength multiplexing optical signal includes at least one specific arrangement signal group, and the specific arrangement signal group includes Q S signal(s) and R P signal(s), where Q is an integer of 1 or more and R is an integer of 1 or more. A frequency difference between any pair of S signals included in the specific arrangement signal group is different from frequency differences between all of other pairs of S signals and frequency differences between all pairs of P signals, and a frequency difference between any pair of P signals included in the specific arrangement signal group is different from frequency differences between all pairs of S signals and frequency differences between all of other pairs of P signals.

    ELECTRO-OPTIC WAVEGUIDE DEVICE AND OPTICAL MODULE

    公开(公告)号:US20200064548A1

    公开(公告)日:2020-02-27

    申请号:US16551175

    申请日:2019-08-26

    IPC分类号: G02B6/12 G02F1/225

    摘要: An electro-optic waveguide device may include a slot waveguide including a lower high-refractive-index layer with a first refractive index and an upper high-refractive-index layer with a second refractive index, wherein the lower high-refractive-index layer and the upper high-refractive-index layer have conductivity and are disposed to face each other with a gap; and a slot part formed as a low-refractive-index layer, wherein the low-refractive-index layer is formed of a material producing an electro-optic effect and has a third refractive index lower than the first refractive index and the second refractive index, wherein the low-refractive-index layer is formed in the gap to come into contact with the lower high-refractive-index layer and the upper high-refractive-index layer, and wherein one of the lower high-refractive-index layer or the upper high-refractive-index layer includes a stretch stretching on both sides of a contact portion with the slot part in a width direction intersecting a transmission direction.