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    SEMICONDUCTOR OPTICAL DEVICE
    3.
    发明公开
    SEMICONDUCTOR OPTICAL DEVICE 审中-公开

    公开(公告)号：US20240322527A1

    公开(公告)日：2024-09-26

    申请号：US18336806

    申请日：2023-06-16

    申请人： Lumentum Japan, Inc.

    发明人： Tetsuyoshi TAKAMURE ,  Ryu WASHINO ,  Yoshihiro KOJIMA ,  Saori HIZUME

    IPC分类号： H01S5/22 ,  H01S5/042 ,  H01S5/227

    CPC分类号： H01S5/2205 ,  H01S5/0425 ,  H01S5/227 ,  H01S5/0265

    摘要： A semiconductor optical device includes: a mesa-stripe structure extending in a first direction; a pair of buried layers, each buried layer including a first slope surface adjacent to a top surface of the mesa-stripe structure, each buried layer including a first upright surface that stands straight from an upper end of the first slope surface, each buried layer including an upper surface higher than the top surface; an insulating film on the upper surface; and an electrode film over the top surface, the first slope surface, and the insulating film. The first upright surface has an upper end. The upper surface of at least one of the pair of buried layers has recesses. Each recess has a second slope surface that slopes downward from the upper surface. The second slope surface has an upper end that extends along a second direction perpendicular to the first direction.

    SEMICONDUCTOR LASER
    5.
    发明公开
    SEMICONDUCTOR LASER 审中-公开

    公开(公告)号：US20240113498A1

    公开(公告)日：2024-04-04

    申请号：US18129661

    申请日：2023-03-31

    申请人： Lumentum Japan, Inc.

    发明人： Atsushi NAKAMURA

    IPC分类号： H01S5/02257 ,  H01S5/028 ,  H01S5/12 ,  H01S5/227

    CPC分类号： H01S5/02257 ,  H01S5/028 ,  H01S5/124 ,  H01S5/227 ,  H01S5/34

    摘要： Some implementation described herein provide a semiconductor laser that is excellent in side mode suppression ratio (SMSR) yield. The semiconductor laser includes: a substrate; a mesa structure formed on the substrate to include a diffraction grating layer and an active layer, the diffraction grating layer including a phase shift portion; a window structure arranged between both ends of the mesa structure in a longitudinal direction thereof and both facets of the semiconductor laser; and a low-reflection facet coating film formed on the both facets, and an effective refractive index of the window structure is lower than an effective refractive index of the active layer.

    Semiconductor light-receiving element
    6.
    发明授权
    Semiconductor light-receiving element 有权

    公开(公告)号：US11916161B2

    公开(公告)日：2024-02-27

    申请号：US18047064

    申请日：2022-10-17

    申请人： Lumentum Japan, Inc.

    发明人： Takashi Toyonaka ,  Hiroshi Hamada ,  Shigehisa Tanaka

    IPC分类号： H01L31/11 ,  H01L31/103

    CPC分类号： H01L31/11 ,  H01L31/1035

    摘要： A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more. At least one of the low-concentration layers includes an absorption layer with a band gap that absorbs incident light.

    SEMICONDUCTOR OPTICAL DEVICE
    7.
    发明公开
    SEMICONDUCTOR OPTICAL DEVICE 审中-公开

    公开(公告)号：US20230352911A1

    公开(公告)日：2023-11-02

    申请号：US17821308

    申请日：2022-08-22

    申请人： Lumentum Japan, Inc.

    发明人： Kazuki NISHIMURA ,  Hideaki ASAKURA ,  Shunya YAMAUCHI ,  Ryosuke NAKAJIMA

    IPC分类号： H01S5/22 ,  H01S5/227 ,  H01S5/042 ,  H01S5/026

    CPC分类号： H01S5/2228 ,  H01S5/2275 ,  H01S5/04256 ,  H01S5/04254 ,  H01S5/0265

    摘要： A semiconductor optical device includes: a semiconductor layer having a projection; a multiple quantum well layer on the projection; a pair of first semiconductor layers in contact with the mesa stripe structure on respective both sides; a pair of second semiconductor layers on the semiconductor layer; a pair of resin layers above the second semiconductor layers; a pair of third semiconductor layers on the second semiconductor layers, each third semiconductor layer surrounding a corresponding one of the resin layers, the third semiconductor layers being different in constituent material from the second semiconductor layers; a first electrode on the semiconductor layer; and a second electrode including a mesa electrode on the mesa stripe structure, a lead-out electrode extending in the second direction from the mesa electrode, and a pad electrode above one of the resin layers, the pad electrode being connected to the lead-out electrode.

    RIDGE TYPE SEMICONDUCTOR OPTICAL DEVICE
    9.
    发明申请
    RIDGE TYPE SEMICONDUCTOR OPTICAL DEVICE 有权

    公开(公告)号：US20230119386A1

    公开(公告)日：2023-04-20

    申请号：US17653747

    申请日：2022-03-07

    申请人： Lumentum Japan, Inc.

    发明人： Sara TAKU ,  Takayuki NAKAJIMA ,  Masaru ONGA ,  Shuhei ONO

    IPC分类号： H01S5/22 ,  H01S5/34 ,  H01S5/042

    摘要： A device includes: a laminate including first and second regions adjacent to respective both sides of an isolation groove; a mesa stripe structure adjacent to the first region on the laminate and extending in the first direction; a bank structure adjacent to the second region on the laminate and extending in the first direction; and an electrode pattern. The isolation groove has an inner surface including a first wall surface adjacent to the first region, a second wall surface adjacent to the second region, and a bottom surface between the first and second regions. The ridge electrode extends from the side of the mesa stripe structure, along a second direction, toward the bank structure, and not beyond the second wall surface. The connection electrode is narrower in width in the first direction than any one of the ridge electrode and the pad electrode.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND OPTICAL SUBASSEMBLY
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND OPTICAL SUBASSEMBLY 有权

    公开(公告)号：US20220158410A1

    公开(公告)日：2022-05-19

    申请号：US17357351

    申请日：2021-06-24

    申请人： Lumentum Japan, Inc.

    发明人： Koichiro ADACHI

    IPC分类号： H01S5/026 ,  H01S5/02

    摘要： A semiconductor light emitting device includes a microstrip substrate with a single-ended transmission line on a top surface, wherein the single-ended transmission line extends from a first end portion to a second end portion, the microstrip substrate has a ground plane on a bottom surface, and the ground plane is opposed and bonded to the conductive pattern. The single-ended transmission line includes a first section and a second section, wherein the second section extends from the first section and includes the second end portion. The second section is lower in characteristic impedance than the first section. A load circuit that includes the wire, the optical modulator, and the termination resistor is electrically connected between the second end portion and the conductive pattern. The load circuit is equal to or lower in the characteristic impedance than the second section.